The year 2010 was the springtime for LED industry, but 2011 was the wintertime. For most manufacturers, the cold winter may last until 2013 or 2014. Since 2009, the notebook computer, monitor and TV have started to adopt LED backlight unit ...
Tags: led industry
Power electronics device market to reach $20bn this year The total market for semiconductor devices (discretes, modules and ICs) dedicated to the power electronics industry will reach $20bn in 2012, according to the report 'Status of the ...
Tags: raw material, GaN SiC
Of 46 Chinese LED chip projects planned in 2009-2010, just 20 put into production Reportlinker has made available a new market research report ‘Global and China LED Industry Report, 2011-2012’ from China Research and ...
Tags: LED Chip
Australia's Griffith University gains AUS$1m grant to develop SiC-onSi chip production processes Griffith University's Queensland Micro- and Nanotechnology Centre in Brisbane, Australia has been awarded AUS$1m in research funding by the ...
Tags: led chip, SPTS SiC-on-Si chip
Despite a cumulative silicon carbide (SiC) raw wafer and epiwafer market that will not exceed $80m in 2012, the body of related patents comprises more than 1772 patent families and over 350 companies since 1928, according to the report ...
Tags: Raw Material, Wafer
China's Xiamen Powerway Advanced Material Co Ltd (PAM-Xiamen), which supplies ultra-high purity crystalline gallium nitride (GaN) and aluminium gallium nitride (AlGaN) materials and other related products and services, has announced the ...
Tags: Free-standing, SI, carbide
LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that on 21 June Challentech International Corp, its partner for sales ...
Mitsubishi Electric to sample SiC power modules for more compact,efficient electronic equipment Tokyo-based Mitsubishi Electric Corp says that,at the end of July,it will begin shipping samples of five kinds of silicon carbide(SiC)-based ...
Tags: Mitsubishi Electric, SiC power modules, electronic equipment
Cree's launches XLamp XP-G2 LEDs,boosting efficiency by 20%in XP footprint LED chip,lamp and lighting fixture maker Cree Inc of Durham,NC,USA has launched the XLamp XP-G2 LED to deliver luminaire manufacturers up to 20%more lumens per ...
Tags: Cree, XLamp XP-G2 LEDs, efficiency.USA, LED lighting
Hong Kong University of Science and Technology has achieved record maximum drain currents and peak transconductances for enhancement-mode(normally off)metal–oxide–(nitride)semiconductor heterojunction field-effect ...
Power+Energy Inc(P+E)of Ivyland,PA,USA has provided a 9000MS Series hydrogen purifier to SemiSouth Laboratories Inc of Starkville,MS,USA,which designs and manufactures silicon carbide(SiC)devices for ...
Tags: SemiSouth, Power+Energy, Hydrogen purifiers, SiC epi, semiconductor, MOCVD
University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
21 June 2012 SemiSouth doubles current rating of 1200V SiC diodes to 10A Picture:SemiSouth's SDB10S120 1200V/10A diodes in TO-252-2L packages. SemiSouth Laboratories Inc of Starkville,MS,USA,which designs and manufactures silicon ...
Tags: SemiSouth, SiC diodes, USA
Recognized as a compelling alternative to silicon for many RF applications,gallium nitride(GaN)technology has generated significant industry interest due to its performance advantages,but has faced significant challenges related to ...
Tags: NXP, RF applications, mainstream GaN
20 June 2012 Mitsubishi develops 170W,70%-efficiency GaN-on-Si PA for base-station transmitters Picture:Mitsubishi Electric's 170W,2.1GHz GaN-on-Si power amplifier. Tokyo-based Mitsubishi Electric Corp has developed a prototype 2GHz ...
Tags: Mitsubishi Electric Corp, GaN-on-Si PA, base-station transmitters