Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
A team of Florida State University materials researchers has developed a new type of light-emitting diode, or LED, using an organic-inorganic hybrid that could lead to cheaper, brighter and mass produced lights and displays in the future. ...
Tags: LEDs, LED lighting, displays
Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...
Tags: AlGaN, ultraviolet lasers, LEDs
Ford has redesigned its Escape SUV with advanced driver-assist technologies, new mobile connectivity along with efficient EcoBoost engines. The Escape SE and Titanium trim levels features 1.5-liter four-cylinder EcoBoost engine. ...
Tags: Ford, Escape SUV, Smartphone, EcoBoost engine
A lightweight PET milk bottle has won recognition in the World Beverage Innovation Awards in Nuremberg. At this year's BrauBeviale, the product from filling and packaging specialist KHS GmbH won in the Best Environmental Sustainability ...
Tags: PET milk bottle, filling, packaging
Audi today is announcing pricing for the 2016 S8 plus and RS 7 performance models. With more powerful engines and enhanced design elements, the S8 plus and RS 7 performance offer elevated performance and sportiness, further reinforcing the ...
Tags: Audi, Audi S8 plus, 4.0 TFSI engine, transmission
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
The 3D printing industry continues to grow from strength to strength. According to the latest market report 3D Printing 2015-2025: Technologies, Markets, Players, published by IDTechEx, Cambridge, UK, this industry is set to boom from $1bn ...
Tags: 3D Printing, plastic printing technologies, metal printers
Sun Chemical Performance Pigments has launched its new SunMica Exterior XC product line, a series of 13 pearlescent special effect pigments specifically geared for exterior coatings applications, especially powder coatings. Available in ...
Tags: Pigments, Exterior Coatings
University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
Mercedes has unveiled two new special edition models of the Mercedes-Benz E-Class Coupé and Cabriolet. The special editions are Sport Edition and V8 Edition. The E400 model features a 329-hp biturbo 3.0L V-6 engine and the ...
Tags: Mercedes, E-Class Models
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
Technische Universit Wien (TU Wien) in Austria has improved its bi-functional 6.8μm quantum cascade laser and detector (QCLD) technology [Benedikt Schwarz et al, Appl. Phys. Lett., vol107, p071104, 2015]. It is hoped that monolithic ...
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors