Japan’s National Institute of Advanced Industrial Science and Technology (NAIST) has claimed the highest breakdown voltage to date for a diamond metal-semiconductor field-effect transistor (MESFET) [Hitoshi Umezawa et al, IEEE ...
Advantech Wireless of Montreal, Canada (which manufactures satellite, RF equipment and microwave systems) has increased its production capacity of gallium nitride (GaN)-based solid-state power amplifiers (SSPAs) and block up-converters ...
Tags: Advantech Wireless, Electronics
The market for gallium nitride (GaN) packaged LEDs in automotive applications will reach $1bn this year for the first time, rising by 11% from $943m in 2013 to $1.05bn in 2014, forecasts the LED Intelligence Service of IHS Technology in a ...
Tags: Automotive LED lighting, GaN LEDs
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the EPC9118, a fully ...
Tags: Buck Converter, Demo Board
The US Patent Office has issued US Patent No. 8,859,310 to Versatilis LLC of Winooski, VT, USA (a technology and business development firm that focuses on novel materials and processes for electro-optical devices, as well as extending its ...
Tags: US Patent, Semiconductor
The next-generation power semiconductor market will increase at a compound annual growth rate (CAGR) of 63% between 2011 and 2017 to more than $500m, forecasts market research firm The Information Network in its report 'Next-Generation ...
Tags: Power Semiconductor, Electronics
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has launched a complete line of MR16 LED lamps powered by its third-generation ...
Tags: Soraa GaN-on-GaN, MR16 Lamps
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the publication of the ...
Xi’an Jiaotong University and Shaanxi Supernova Lighting Technology Co., Ltd., of China have used silver nanorods to engineer gallium vacancy defects in gallium nitride (GaN) to create color tunable light emitting diodes [Yaping Huang ...
Tags: GaN, LEDs, LED heterostructure
Currently, most flexible electronic and optoelectronic devices are fabricated using organic materials. However, for these devices inorganic compound semiconductors such as gallium nitride (GaN) can provide advantages over organic materials ...
Tags: LEDs, LED displays, Electrical, Electronics
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2100, the first ...
Tags: EPC, EPC2100, Electrical
An interdisciplinary team at the US Naval Research Laboratory (NRL) has received the Japan Society of Applied Physics’ 2014 Outstanding Paper Award. The award is only given to a select group of papers that present excellent ...
Tags: NRL, Award, Electronics
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has announced new psychophysical research proving that whiteness and color ...
Tags: Whiteness, Color Rendering, Electronics
RF Micro Devices Inc of Greensboro, NC, USA has unveiled 11 new amplifiers, of which six are gallium nitride (GaN)-based products to support the requirements of the new data over cable service interface specification (DOCSIS) 3.1. RFMD is ...
Tags: RFMD, 3.1 Cable Networking, Electronics
In booth 419 at the IEEE Energy Conversion Congress & Expo (ECCE 2014) in Pittsburgh, PA, USA (14–18 September), GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching ...