Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the light-emitting diode (LED) market is forecast to increase at a compound annual growth rate (CAGR) of 69% from 2013 to 2020, by which time they will account for 40% of ...
Tags: LED, electronics
Test, measurement and monitoring equipment supplier Tektronix Inc of Beaverton, OR, USA has expanded its family of precision power analyzers with the introduction of the PA1000 single-phase power analyzer. Featuring a patent-pending ...
Tags: power, electrical
The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for 40% of all GaN LEDs manufactured, according to IHS. In ...
Tags: GaN-on-Silicon, LEDs
In conjunction with the Defense Manufacturers Conference (DMC 2013) in Orlando, FL (2-5 December), RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA is releasing new gallium arsenide ...
The UK-based semiconductor company says that it has doubled efficacy since shipping its first GaN-on-Si LEDs back in April, and that its roadmap includes eclipsing the efficacy advantage currently held by sapphire-based LEDs. Plessey has ...
Tags: MID-Power LED, LED Lighting
Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN™) LED technology, announced that it will open a new semiconductor fabrication plant in Buffalo, New York. In partnership with the State of ...
Plessey Semiconductors Ltd of Plymouth, UK has announced availability of its next-generation gallium nitride -on-silicon (GaN-on-Si) mid-power LEDs. The product family doubles the luminous efficacy of the firm’s first-generation MAGIC ...
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
A Korea/USA team of engineering researchers has developed a gallium nitride (GaN) metal-oxide-semiconductor high-electron-mobility transistor (MOSHEMT) with embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Semicond. Sci. ...
Tags: GaN Transistors, Embedding
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN-on-GaN' (gallium nitride on gallium nitride) substrates, is to open a new semiconductor fabrication plant in Buffalo, NY. In partnership with the ...
Tags: GaN-on-GaN, LED, Electrical, Electronics
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
Soraa, the world leader in the development of gallium nitride on gallium nitride (GaN on GaN™) LED technology, announced today that it will open a new semiconductor fabrication plant in Buffalo, New York. In partnership with the State ...
RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics