Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Royal Philips Electronics of Eindhoven, The Netherlands claims that it has created the world’s most energy-efficient LED lamp for general lighting applications. Philips researchers have developed a prototype ‘TLED’ lamp ...
In a development that could make the advanced form of secure communications known as quantum cryptography more practical, University of Michigan researchers – supported by the US National Science Foundation (NSF) - have demonstrated a ...
Tags: GaN nanowires, semiconductor processing techniques, semiconductor
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
Plessey's first silicon-based LEDs are relatively-low-output designs targeting the indicator and control-panel-backlight market, but the company says it will quickly deliver LEDs for general-lighting applications. Plessey has announced ...
Taiwan National Tsing Hua University has been studying ways to improve the modulation performance of high-output-power nitride semiconductor light-emitting diodes (LEDs) [Chien-Lan Liao et al, IEEE Electron Device Letters, published online ...
Tags: GaN InGaN LEDs, LED, Electrical, Electronics, taiwan
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA says that its EPC9005 development board featuring the firm’s 40V EPC2014 enhancement-mode gallium nitride (eGaN) field-effect transistors (FETs) – as launched in ...
Tags: Power Conversion, GaN devices
Plessey today announced that samples of its Gallium Nitride (GaN) on silicon LED products are today available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available ...
Tags: LED products, LED
Plessey Semiconductors Ltd of Plymouth, UK says that samples of its PLW111010 gallium nitride (GaN)-on-silicon LED products are now available. Picture: Plessey's new MAGIC GaN-on-Si LED product. The entry-level products are claimed ...
Gwangju Institute of Science and Technology and Samsung Electronics Co Ltd of South Korea have developed a zinc oxide (ZnO) nanorod (NR) process for improving light extraction from gallium nitride (GaN) light-emitting diodes (LEDs) by up to ...
Tags: GaN, LEDs, Electronics
Panasonic Corp of Osaka, Japan has announced the development of a gallium nitride (GaN)-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The ...
Tags: switching operations, GaN, power transistor
Ohio State University (OSU) has used polarization engineering to create low-resistance tunnel junctions in gallium nitride (GaN)-based structures [Sriram Krishnamoorthy et al, Appl. Phys. Lett., vol102, p113503, 2013]. Such junctions could ...
Tags: GaN, InGaN, semiconductor
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of ...
The UK’s University of Cambridge has opened a new £1m facility for growing gallium nitride that aims to enable researchers to expand and accelerate their work, which promises to further reduce the cost and improve the efficiency ...
Tags: LED lights, LED, lights
Gallium nitride has been described as “the most important semiconductor since silicon” and is used in energy-saving LED lighting. A new £1million (or US$1,530,700) growth facility will allow University of Cambridge ...
Tags: GaN LEDs, Electrical, lighting