Researchers in Nanjing,China have reported the first fabrication and characterization at high temperature of high-performance solar-blind photodetectors(PDs)based on an aluminium gallium nitride(AlGaN)absorption layer and planar ...
Tags: High-Temperature, PD, MSM, Solar
The German organization for applied research finalizes a strategic collaboration with Scotland’s University of Strathclyde. £89M Technology and Innovation Centre As first reported by optics.org last November, Glasgow ...
Kyma's AlN templates are manufactured using its patented plasma vapor deposition of nanocolumns(PVDNC)technology,which provides GaN LED manufacturers with throughput,cost,and performance benefits.Light emitting diode(LED)manufacturers ...
24 May 2012 EPC launches eighth brick DC-DC power converter demo board featuring eGaN FETs Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect ...
Tags: EPC E-mode GaN FETs, Lights, Lighting
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminium nitride(AlN)and aluminium gallium nitride(AlGaN)materials and related products and services,says that it has demonstrated a 10-inch ...
Tags: 10"AlN-on-sapphire template, GaN, PVDNC, GaN LED
In the presence of Flemish Minister Ingrid Lieten and Limburg Governor Herman Reynders,EpiGaN nv of Hasselt,Belgium has officially opened its new production site in Research Campus Hasselt(RCH)as the location for volume production of its ...
Efficient Power Conversion Corp(EPC)of El Segundo,CA,USA,which makes enhancement-mode gallium nitride on silicon(eGaN)power field-effect transistors(FETs)used in power management applications,says that Dr David Reusch has joined its ...
Researchers in China based at State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,have demonstrated a selective area growth(SAG)method for recessing gates in aluminium gallium nitride(AlGaN)semiconductor ...
''Gallium nitride power transistors are poised to move out of the labs and into mains PSUs and motor drives,'' was one message from the PCIM power show in Nuremberg this month. ''Only if the price drops and designers can bear the ...
Tags: Gan, Silicon, transistors
AIXTRON SE announced a new MOCVD system order from the University of Warsaw,Poland. The contract is for one Close Coupled Showerhead(CCS)reactor in a 3x2-inch wafer configuration,to be used for the growth of gallium nitride(GaN)materials. ...
Tags: AIXTRON CCS, MOCVD, sustainable
For first-quarter 2012, Kopin Corp of Taunton, MA, USA, a supplier of III-V semiconductor products and microdisplays for mobile applications (including smartphones, tablet PCs, military thermal weapons sights and wearable computers), has ...
Tags: Kopin, USA, microdisplays
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
University of Warsaw, Poland, researchers will grow gallium nitride (GaN) materials on a new AIXTRON SE Close Coupled Showerhead (CCS) metal organic chemical vapor deposition (MOCVD) reactor in a 3 x 2” wafer configuration. It will be ...
Tags: mocvd
University of Warsaw, Poland, researchers will grow gallium nitride (GaN) materials on a new AIXTRON SE Close Coupled Showerhead (CCS) metal organic chemical vapor deposition (MOCVD) reactor in a 3 x 2” wafer configuration. It will be ...
Tags: Market View, mocvd
AIXTRON SE announced a new MOCVD system order from the University of Warsaw,Poland.The contract is for one Close Coupled Showerhead(CCS)reactor in a 3x2-inch wafer configuration,to be used for the growth of gallium nitride(GaN)materials.The ...
Tags: University of Warsaw, Gan Research, gallium nitride(GaN)materials