Researchers in Singapore claim the first DC and microwave performance measurements for 0.15μm-gate aluminium gallium nitride(AlGaN)on gallium nitride high-electron-mobility transistors(HEMTs)on silicon substrates with gold-free ...
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
Researchers in China have designed and constructed a two-stage 2.5-5GHz low-noise amplifier(LNA)using enhancement-mode(normally-off)aluminium gallium arsenide(AlGaAs)pseudomorphic high-electron-mobility transistors(pHEMTs)[Peng Yangyang et ...
Tags: LNA AlGaAs AlGaAs pHEMT
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits, FPGAs and customizable SoCs, and subsystems) has expanded its family of radio-frequency transistors based on gallium ...
Tags: Microsemi, GaN on SiC, radio frequency transistors, HEMT
Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q3/2012 the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, ordered two Aixtron Close Coupled Showerhead (CCS), metal organic chemical vapour ...
AIXTRON SE today announced that the Suzhou Institute of Nano-tech and Nano-bionics (SINANO), China, has made a purchase order for two AIXTRON Close Coupled Showerhead (CCS) systems to extend the center's nitride semiconductor research. The ...
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
Singapore’s Nanyang Technological University has made a first demonstration of nitride semiconductor high electron mobility transistors (HEMT) grown on silicon substrates using ammonia molecular beam epitaxy (MBE) rather than the ...
Tags: Singapore, Technological University, electron mobility transistors
Researchers in Switzerland and the USA have reported the first large-signal performance for a gallium nitride on silicon(GaN-on-Si)high-electron-mobility transistors with output power density of 2W/mm and associated peak power-added ...
Tags: GaN/Si, HEMTs, high-electron-mobility transistors, frequency performance
The Millimeter-Wave Electronics Group of the Swiss Federal Institute of Technology(ETH)Zurich has been exploring the use of Teflon amorphous fluoropolymer(AF)as an interlayer dielectric for III-V double heterostructure bipolar ...
Tags: Teflon, transistor, AF, DHBT
University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN
4 June 2012 Cree launches X-band fully matched 50-100W GaN HEMTs for commercial radar and satcoms Cree Inc of Durham,NC,USA has launched high-efficiency X-band,fully matched gallium nitride(GaN)high-electron-mobility transistors(HEMTs)for ...
Tags: Cree Inc, GaN HEMTs, high-efficiency X-band, semiconductor, IEEE