At the International Conference on Silicon Carbide and Related Materials (ICSCRM 2013) in Miyazaki, Japan (29 September to 4 October), SAMCO Inc of Kyoto, Japan, a supplier of etch, chemical vapour deposition (CVD) and surface treatment ...
Tags: Samco Etch, Electrical, Electronics
ARPA-E deputy director Cheryl Martin has announced $27m in funding from the US Department of Energy's (DOE) Advanced Research Projects Agency-Energy (ARPA-E) for 14 projects aimed at developing next-generation power conversion devices that ...
Tags: Electrical, Electronics
Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...
Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics
Showa Denko (SDK) is launching silicon carbide (SiC) epitaxial wafers with a diameter of 6 inches (150mm) - the largest size currently available, it is claimed - for use in power devices. The firm is also selling a new grade of 4-inch ...
Tags: Epiwafers, Inverter Power Devices
Tokyo-based Toshiba Corp has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBD) with the addition of a 10A product to its existing line-up of 6A, 8A and 12A products (which operate with a forward voltage of 1.7V ...
Tags: Toshiba, Electrical, Electronics
RF Micro Devices Inc of Greensboro, NC, USA has introduced what it claims are the world's first 6-inch gallium nitride on silicon carbide (GaN-on-SiC) wafers for manufacturing RF power transistors for both military and commercial use. The ...
Microsemi Corp of Aliso Viejo, CA, USA (which designs and makes analog and RF devices, mixed-signal integrated circuits and subsystems) has expanded its family of radio-frequency power transistors based on gallium nitride (GaN) ...
Tags: Microsemi, Electrical, Electronics
To increase the efficiency of voltage converters and minimize heat losses, researchers at the Fraunhofer Institute for Applied Solid State Physics IAF in Germany are developing transistors based on gallium nitride, characterized by low ...
Tags: IAF FBH, Electrical, Electronics
Nanoelectronics research centre imec of Belgium and Veeco Instruments Inc. (Nasdaq:VECO) are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. Barun ...
Nanoelectronics research center Imec of Belgium and Veeco Instruments Inc. are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si) -based power devices and LEDs. “The ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA and Belgium's imec are collaborating on a project aimed at lowering the cost of producing gallium nitride on silicon (GaN-on-Si)-based power ...
Tags: LED, Power Electronics, Electrical, Electronics
Fast-growing semiconductor designer ARM has snapped up Sensinode, a Finnish start-up specialising in software technology behind the "internet of things". Like ARM, Sensinode makes money by licensing, but of software to semiconductor ...
Tags: Computer Products, software
Japan's SAMCO Inc, a supplier of etch, chemical vapour deposition (CVD) and surface treatment systems for the semiconductor industry, says that its stock listing has been transferred from the TSE JASDAQ (Standard) market to the Second ...
Tags: Electrical, Electronics
The LED Show 2013 officially opened in Las Vegas on August 14, 2013, this event has attracted leading LED manufacturers displaying the latest technology and products for attendees to view, compare, and evaluate. In addition, the conference ...
Tags: High-voltage LEDs, Mid-power Push
Researchers based in Belgium have developed gold-free nitride semiconductor Schottky barrier diodes (SBDs) on 200mm-diameter silicon to complement metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) previously ...
Tags: Barrier Diodes, Electrical, Electronics