Soitec of Bernin, near Grenoble, France, which makes engineered substrates including silicon-on-insulator (SOI) wafers, says that it is defending its rights in an investigation by the US International Trade Commission (ITC) instituted on 18 ...
Tags: Soitec, SOI, Engineered substrates
Royal Philips, the global leader in lighting and the City of San Jose officially announced a project to pilot 50 Philips SmartPoles, which bring together energy efficient LED lighting and fully integrated 4G LTE wireless technology by ...
Tags: Philips, Smart Streetlights, LED luminaires
Tokyo-based Solar Frontier – the largest manufacturer of CIS (copper indium selenium) thin-film photovoltaic (PV) solar modules – says that, in joint research with Japan’s New Energy and Industrial Technology Development ...
Tags: solar modules, PV, Solar Frontier
Specialty foundry TowerJazz (which has fabrication plants at Tower Semiconductor Ltd in Migdal Haemek, Israel, and at its subsidiaries Jazz Semiconductor Inc in Newport Beach, CA, USA and TowerJazz Japan Ltd) has signed a definitive ...
Tags: TowerJazz Panasonic, CMOS, Semiconductor
China makers whose PV modules may not be able to meet the government's procurement requirement are looking to ship their products to India, which has set a target PV installation of 12GWp for 2016, according to industry sources. ...
Tags: PV Module, PV Installation, PV Power
Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
Viewing that demand for crystalline silicon solar cells has been increasing, Taiwan- and China-based solar cell makers are expected to try their best to expand production capacities as soon as possible and consequently currently idle ...
Tags: Solar Cell, Crystalline Silicon
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
Tokyo-based Solar Frontier - the largest manufacturer of CIS (copper indium selenium) thin-film photovoltaic (PV) solar modules – and TSK Group of Gijón, Spain (a business group in engineering development and the supply of ...
Power semiconductor device manufacturer Rohm Co Ltd of Kyoto, Japan has developed a 1200V/300A full-SiC (silicon carbide) power module - integrating a SiC-SBD (Schottky barrier diode) and SiC-MOSFET (metal-oxide-semiconductor field-effect ...
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, to support its accelerating ...
Tags: EPC, GaN, semiconductors
Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE