Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...
Tags: Panasonic, GaN transistor, AlGaN
HC Semitek announced Tuesday night that it will be acquiring 100% of Crystaland shares for RMB 1.08 billion (US $170 million), according to a Chinese-language Securities Times report. Following the transaction, Crystaland will become a ...
Tags: HC Semitek, Crystaland, LED tube lights
The new “Brilliant Color” LED is especially designed for shop lighting applications as it features a high color quality which is very similar to that of high intensity discharge lamps (HID). This enables rich and saturated ...
Tags: Osram, Color-Beautify LEDs, shop lighting
Researchers from National Chiao Tung University, Taiwan have created highly flexible, efficient white LEDs with potential use in wearable displays and non-flat surfaces, such as curved and flexible television screens. While the design ...
Tags: Bendable LEDs, flexible LEDs
ESCATEC, one of Europe's leading providers of contract design and manufacturing services, will be launching its solution to the challenge of effectively cooling high brightness LEDs on its stand E8 at the LED Professional Symposium 2015 in ...
Tags: ESCATECLED, Heat Spreading Solution, Cooling Technology
The factory in Mesa, Arizona, had never been intended to house the manufacture of a gemstone. Ahead of the photovoltaics industry’s 2011-2012 meltdown, First Solar had built it with the aim of producing 280 MW worth of solar panels ...
Tags: Arizona, photovoltaics industry, Alchemy Turns Sapphire
In a dramatic change from the status quo, nearly half of all gallium nitride (GaN) LEDs will be produced on silicon substrates by the end of the decade. That’s according to a new report by analysts at IHS, who forecast that the ...
Tags: LED Production, GaN LEDs, sapphire wafers
The U.S. Department of Energy (DOE) has published the 2014 edition of its Solid-State Lighting Manufacturing R&D Roadmap. The Roadmap, which complements the SSL R&D Multi-Year Program Plan, intended for R&D programs, aims to guide ...
Tags: LED, OLED Lighting
When asked whether he had envisioned the impact that his revolutionary blue LED would have in years to come, new Nobel physics laureate Shuji Nakamura’s answer was in typically modest and candid. “No!” he replied in a ...
Tags: blue LED, zinc selenide, semiconductor material, LED lighting
Having ventured into the color LED market with its traffic light products in 1998, leading LED manufacturer Lumileds has come a long way with its color LED designs. A week ahead of Lumileds LUXEON C Color Line launch, the company website ...
Tags: Lumileds, LUXEON C, color LEDs, architectural lighting
For third-quarter 2015, AXT Inc of Fremont, CA, USA, which makes gallium arsenide (GaAs, indium phosphide (InP) and germanium (Ge) substrates and raw materials, has reported revenue of $18.4m, down 12.4% on $21m last quarter and down 20% on ...
Researchers in the USA have been working on gallium nitride phosphide (GaNP) as an absorbing material for solar power [S. Sukrittanon et al, Appl. Phys. Lett., vol107, p153901, 2015]. The aim of the team from University of California San ...
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices
Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...