UPM Raflatac has expanded its security labels range with the introduction of two new ultra-destructible (UD) film labels. Designed for the European market, the new films can be used by brand owners as secure labeling solutions. They can ...
Tags: UPM Raflatac, UD film labels
Oracle Networking Group in the USA believes that it has made the first demonstration of an integrated surface-normal coupled laser array on a silicon-on-insulator photonics platform [Shiyun Lin et al, Optics Express, vol24, p21455, 2016]. ...
Imec and Ghent University in Belgium have used aspect ratio trapping (ART) techniques to produce indium gallium arsenide (InGaAs) multiple quantum wells (MQWs) on 300mm-diameter silicon in a ridge format that could be used in future laser ...
Tags: InGaAs MQWs, InGaAs Laser diodes, Imec and Ghent University
MPS Systems North America announced that records have been broken at Labelexpo Americas 2016. At Labelexpo, MPS introduced together with EMT the Chameleon RobustCut side load die station. Also, MPS partnered with Kodak to perform live ...
Tags: MPS Systems North America, Labelexpo Americas 2016, records
Times and trends are changing all too rapidly with consumers demanding more value for every penny they spend on purchase. Packaging as we have all known is in-alienable to the product and forms the first line of influence that is crucial ...
Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
For first-half 2016, epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has reported revenue of £63m, up 18% on £53.2m in first-half 2015 (above the "at least 15% growth" given in a trading update in late July), ...
Tags: IQE, revenue report
Rubicon Technology Inc of Bensenville, IL, USA (which makes monocrystalline sapphire substrates and products for the LED, semiconductor and optical industries) has announced plans to cease all production activities at its plant in Penang, ...
Tags: Rubicon, Malaysia plant, PSS
Klöckner Pentaplast has unveiled a new range of label film packaging solutions and services at Labelexpo Americas 2016. The company is exhibiting Pentalabel ClearFloat and PMMI Master Class sleeving substrates at the event, is being ...
Tags: Klöckner Pentaplast, Labelexpo Americas 2016, packaging solutions
Epson America has introduced new SurePress L-6034W single-pass industrial press, designed for use in several industries. The new label press can be used to carry out short to mid-run jobs across various industries, including health and ...
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...
Tags: InGaAs, Laser diodes, III-Vs-on-Si
A team of researchers at the USA's Massachusetts Institute of Technology (MIT) and the Masdar Institute of Science and Technology in Abu Dhabi, United Arab Emirates has developed a new solar photovoltaic 'step cell' that combines two ...