University of Notre Dame (UND) and IQE RF LLC of Somerset, NJ, USA have achieved record cut-off frequencies of 370GHz for InAlN/AlN/GaN/SiC high-electron-mobility transistors. The use of indium aluminum nitride (InAlN) barrier layers ...
Tags: Raw Material
20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...
Tags: GaN/Si HEMTs, IEMN, AlGaN
Taiwan-based researchers have been working to reduce nitride semiconductor high-electron-mobility transistor(HEMT)costs by developing copper interconnect structures compatible with production processes on silicon substrates[Yueh-Chin Lin et ...
Tags: HEMT, Breakdown Voltages, Copper, Gold
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN
5 June 2012 Kyma demos K-Slice diamond wire technology on sapphire boules Picture:First slices from a 2"LED quality sapphire boule using Kyma's K-Slice super-abrasive diamond wire technology in a commercial multi-wire saw ...
Tags: Kyma Technologies Inc., K-Slice diamond wire technology
Researchers in Nanjing,China have reported the first fabrication and characterization at high temperature of high-performance solar-blind photodetectors(PDs)based on an aluminium gallium nitride(AlGaN)absorption layer and planar ...
Tags: High-Temperature, PD, MSM, Solar
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
Kyma Technologies Inc of Raleigh,NC,USA,which provides crystalline gallium nitride(GaN),aluminium nitride(AlN)and aluminium gallium nitride(AlGaN)materials and related products and services,says that it has demonstrated a 10-inch ...
Tags: 10"AlN-on-sapphire template, GaN, PVDNC, GaN LED
This industry beating result was achieved under the DARPA Compact Mid-Ultraviolet Technology(CMUVT)program and in collaboration with Army Research Laboratories(ARL). This latest development from the world's leading supplier of UV LEDs ...
Researchers in China based at State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University,have demonstrated a selective area growth(SAG)method for recessing gates in aluminium gallium nitride(AlGaN)semiconductor ...
11 May 2012 Record transconductance of 1105mS/mm for GaN/InAlN MIS-HFET University of California Santa Barbara(UCSB)has produced gate-first self-aligned metal-insulator-semiconductor heterostructure field-effect ...
Tags: GaN/InAlN, MIS-HFET, UCSB, semiconductor material
RWTH Aachen University and Aixtron SE in Germany have developed a new technique to create aluminium oxide insulated gates for nitride semiconductor transistors[Herwig Hahn et al,Semicond.Sci.Technol.,vol27,p062001,2012].The method consists ...
Tags: Plasma oxidation, RWTH Aachen University, Aixtron SE, GaN
Sensor Electronic Technology, Inc (SETi) of Columbia, South Carolina USA, announced record efficiencies of UV LEDs operating in the germicidal UV-C range of 11% external quantum efficiency (EQE) with a corresponding wall-plug efficiency ...
Tags: uvc led
A Kansas company has received $2.5 million in series A funding to commercialize its process to grow high-quality, low-cost aluminum nitride substrates. Nitride Solutions Inc., a Wichita, Kansas-based developer of aluminum-nitride (AlN) ...
Tags: aln, raw material
A Kansas company has received $2.5 million in series A funding to commercialize its process to grow high-quality, low-cost aluminum nitride substrates. Nitride Solutions Inc., a Wichita, Kansas-based developer of aluminum-nitride (AlN) ...
Tags: Market View, raw material, aln