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Seren Photonics and Bluglass Collaboration Results in Successful Semipolar GaN Template Process Transfer

Jun 8, 2017

Seren Photonics Limited, based near Cardiff, Wales, UK, a developer of semipolar gallium nitride and BluGlass Limited of Silverwater, Australia, a developer of semiconductor manufacturing process and equipment have announced the completion ...

Tags: Seren Photonics, LED

Two-Dimensional Gallium Nitride with Graphene Encapsulation

Sep 28, 2016

Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...

Tags: 2D GaN, graphene encapsulation, SiC

Monolithic Band-Engineered Semi-Polar White Light-Emitting Diode

Aug 12, 2016

University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...

Tags: LED, UCSB

Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown

Apr 8, 2016

HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...

Building Components for GaN Power Switches

Dec 18, 2015

A team of engineers from Cornell University, the University of Notre Dame and the semiconductor company IQE has created gallium nitride (GaN) power diodes capable of serving as the building blocks for future GaN power switches -- with ...

Tags: GaN p-n junction diodes, GaN Power Switches, solid-state lighting

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

Claiming Record 4.7kv Breakdown for Gallium Nitride P-N Diodes

Oct 15, 2015

Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...

Tags: GaN p-n diodes, GaN Free-standing, GaN substrates

Demand for Larger Diameters to Boost GaN Substrate Market From $2.2bn in 2014 to $4bn by 2020

Sep 14, 2015

The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...

Tags: Diameters, GaN Substrate Market

GaN Devices Market Growing at CAGR of 15.1% From $481.8m in 2014 to $1315m in 2021

Aug 10, 2015

The global gallium nitride (GaN) industrial devices market is rising at a compound annual growth rate (CAGR) of 15.1% from $481.8m in 2014 to $1315m in 2021, forecasts Transparency Market Research in its report 'GaN Industrial Devices ...

Tags: industrial devices, LED devices

Researchers Claimed Record High Breakdown Voltage for Aluminium Gallium Nitride

Mar 26, 2015

Researchers at University of Notre Dame (UND) in the USA have claimed record high breakdown voltage for aluminium gallium nitride (AlGaN/GaN) lateral Schottky barrier diodes (SBDs) on silicon [Mingda Zhu et al, IEEE Electron Device Letters, ...

Tags: silicon diodes, GaN substrates

Anvil and Cambridge Centre for GaN Grown Cubic GaN on 3c-Sic on Silicon Wafers

Dec 12, 2014

Anvil Semiconductors Ltd of Coventry, UK and the Cambridge Centre for GaN (part of University of Cambridge’s Department of Materials Science and Metallurgy) have grown cubic GaN on 3C-SiC on silicon wafers by metal-organic chemical ...

Tags: green LEDs, silicon wafers, Electrical

UCSB And NTU Have Been Optimizing Ammonia-Based MBE for GaN Growth

Jun 13, 2014

University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...

Tags: GaN MBE Veeco, Electrical, Electronics

Some Says 'If It Can Be Made on Silicon, It Will Be Made on Silicon'

May 29, 2014

Some says “if it can be made on Silicon, it will be made on silicon”. Is that true for GaN too? And if so, can it be applied in all GaN-based applications: LED, power, RF and laser?… Yole Développement (Yole) ...

Tags: GaN-on-Si, Power Electronics

UND Is Developing Gallium Nitride Quantum Dots in Aluminium Nitride

Feb 21, 2014

University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...

Tags: UV Light Emission, LEDs

Ammono S.A. Is Partnering with Kyma Technologies Inc of Raleigh

Jan 24, 2014

Ammono S.A. of Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, has announced that it is partnering with Kyma Technologies Inc of Raleigh, NC, USA and MicroLink Devices of Niles, IL, USA in two novel ...

Tags: efficiency of power electronics, semiconductor materials

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