DBRs

Enhancing The Efficiency of White LEDs Via Reflection

Chien-Chung Lin, Huang-Yu Lin, Kuo-Ju Chen, Sheng-Wen Wang, Kuan-Yu Wang, Jie-Ru Li, Huang-Ming Chen and Hao-Chung Kuo The use of distributed Bragg reflectors in remote-phosphor white-LED packaging significantly improves luminous ...

Tags: White LED Packaging

Tunnel Junction for Vertical-Cavity Surface-Emitting Laser

University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...

Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE

Researchers in USA and Saudi Arabia Producing 610nm-Wavelength Red Lasers

Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...

Tags: plastic fiber, Electronics

UCSB Used PEC to Create 405nm-Wavelength Vertical-Cavity Surface-Emitting Lasers

University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...

ETH Zürich and Philips Technologie GmbH Have Developed 981nm-Wavelength

ETH Zürich and Philips Technologie GmbH have developed 981nm-wavelength passively mode-locked electrically pumped vertical-external-cavity surface-emitting lasers (EP-VECSELs) with “the shortest pulses (2.5ps), highest average ...

Tags: EP-VECSELs InGaAs GaAs

Sun Yat-sen University in China has improved the wall-plug efficiency

Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...

Tags: InGaN LEDs, Silicon, semiconductor

The Team Was Variously Based at University

A transnational team of researchers has reported the first electrically pumped exciton-polariton laser device using an arsenide semiconductor microcavity [Christian Schneider et al, Nature, vol. 497, p348, 2013]. The team was variously ...

Tags: Electrical Pumping, Electrical, Electronics

Researchers Have Developed an ALD Technique to Create DBR

Researchers in China have developed an atomic layer deposition (ALD) technique to create distributed Bragg reflectors (DBR) for increasing nitride semiconductor light-emitting diode (LED) output power by up to 43% [Hongjun Chen et al, Appl. ...

Tags: DBR ALD MOCVD LEDs GaN, Lighting, LED

Create Interference Effects That Reflect Light Back From The Structure

Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...

Tags: DBRs, VCSELs, AlGaAs, RCLEDs, GaN, AlGaN, MOCVD

Hamamatsu Reports Record-Power-Density VCSEL

Hamamatsu reports record-power-density VCSEL Hamamatsu Photonics K.K.has reported the first demonstration of 10-watt-class output power for a vertical-cavity surface-emitting laser(VCSEL)array with ion-implanted isolated current ...

Tags: Hamamatsu, Record-Power-Density, current apertures, VCSEL