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TI Expands GaN Power Portfolio with Smallest and Fastest GaN FET Drivers

Mar 7, 2018

Expanding on its gallium nitride (GaN) power portfolio, Texas Instruments Inc (TI) has launched two high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing designs in speed-critical applications such ...

Tags: GaN Power, GaN FET Drivers

Peregrine's New PE29102 FET Driver Brings Fastest Switching Speeds to GaN Class-D Audio

Oct 18, 2017

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched the UltraCMOS PE29102 high-speed FET driver. With a ...

Tags: Peregrine Semiconductor, Semiconductor

TI Launches High-Voltage, Three-Phase High-PWM-Frequency GaN Inverter Reference Design for 200V AC Servo Drives and Robotics

Jun 29, 2017

Texas Instruments Inc (TI) has launched a three-phase, gallium nitride (GaN)-based inverter reference design that helps engineers build 200V, 2kW AC servo motor drives and next-generation industrial robotics with fast current-loop control, ...

Tags: GaN Inverter, AC Servo Drives

EPC Launches GaN Half-Bridge Enabling 12V to 1.8V System Efficiency Over 85% at 5MHz at 14A Output

Jun 2, 2017

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has announced the EPC2111, a 30V ...

Tags: transistors, GaN transistor

PowerAmerica Funding Speeds Transphorm's Development of 900V GaN HEMT Product

Apr 25, 2017

Due to funding assistance from PowerAmerica – a private-public partnership between the US Department of Energy, industry and academia – Transphorm Inc of Goleta, near Santa Barbara, CA, USA, which designs and manufactures what ...

Tags: PowerAmerica, GaN products

Reducing Subthreshold Swing of Gallium Arsenide Transistors

Sep 28, 2016

Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...

Tags: KIST, GaAs, FET

Telcodium Partners with Transphorm on First Redundant Power Supplies Using GaN Fets

Sep 20, 2016

Power supply design firm Telcodium of Boucherville, QC, Canada, in collaboration with Transphorm Inc of Goleta, near Santa Barbara, CA, USA — which designs and manufactures JEDEC-qualified 650V gallium nitride (GaN)-based devices for ...

Tags: Telcodium, Transphorm, GaN FETs

Dialog Enters GaN Market with Integrated Devices Targeting Fast-Charging Power Adapters

Aug 30, 2016

Dialog Semiconductor plc of London, UK, a fabless provider of highly integrated power management, AC/DC power conversion, solid-state lighting (SSL) and Bluetooth low-energy technology, has announced its first gallium nitride (GaN) power IC ...

Tags: GaN, Dialog Semiconductor plc, SSL

Peregrine Unveils Fastest GaN FET Driver

Jul 16, 2016

Peregrine Semiconductor Corp of San Diego, CA, USA – a fabless provider of radio-frequency integrated circuits (RFICs) based on silicon-on-insulator (SOI) – has launched what it claims is the fastest gallium nitride (GaN) ...

Tags: Peregrine, GaN FET Driver

Freebird Partners with EPC to Develop Radiation-Hardened GaN Power Conversion Systems for Satellite and Harsh-Environment Applications

Apr 15, 2016

Freebird Semiconductor Corp of North Andover, MA, USA, which manufactures high-reliability gallium nitride (GaN) high-electron-mobility transistor (HEMT) products for power semiconductor technologies in the commercial space-flight ...

Tags: EPC E-mode GaN FETs GaN-on-Si

EPC Offers 15MHz Half-Bridge Development Boards Using eGaN FET Synchronous Bootstrap Augmented Gate Drive

Apr 5, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has made available the EPC9066, EPC9067 ...

Tags: EPC E-mode GaN FETs GaN-on-Si

Navitas Launches First GaN Power ICs

Mar 21, 2016

Navitas Semiconductor Inc of El Segundo, CA, USA has launched its first products, which are claimed to be the industry's first gallium nitride (GaN) power ICs. Navitas was founded in 2013, and in 2014 investment firm MalibuIQ licensed the ...

Tags: GaN, Power electronics

EPC Launches 100W, 92%-Efficient eGaN FET Development Board for 6.78MHz Airfuel Wireless Power Standard

Feb 18, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC9065, a development ...

Tags: Wireless Power, EPC

EPC Launches eGaN Power Transistor Enabling Higher Resolution in Augmented Reality and Autonomous Vehicle Applications

Feb 14, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2040 power transistor, ...

Tags: Transistor, power transistor

EPC Posts Video Series on How to Design with GaN Power Devices for Power Conversion

Feb 12, 2016

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has expanded its video library on GaN ...

Tags: EPC, E-mode GaN FETs, GaN-on-Si

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