GaN Substrates articles & resources on Made-in-China.com

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Sep 9, 2016

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

Sodium Flux Route to Free-Standing Gallium Nitride Substrates

Jul 19, 2016

Osaka University in Japan has developed a liquid phase epitaxy (LPE) process for the growth of gallium nitride (GaN) in a sodium (Na) flux with a small amount of carbon (C) that, with the addition of lithium (Li) and gallium, can also be ...

Tags: Gallium Nitride Substrates, GaN crystal

Toyoda Gosei Develops High-Voltage GaN Power Semiconductor Device for Large-Current Operation

Jul 12, 2016

Toyoda Gosei Co Ltd of Kiyosu, Aichi Prefecture, Japan has developed what is claimed to be the first 1.2kV-class power semiconductor device chip capable of large-current operation exceeding 20A. Picture: Forward current–voltage ...

Tags: Toyoda Gosei, wiring technology, hybrid vehicles

Kyma and Quora Partner on GaN Substrate Materials

Jun 23, 2016

Kyma Technologies Inc of Raleigh, NC, USA (which provides crystalline nitride materials, crystal growth and fabrication equipment, and power switching electronics) and Quora Technology Inc have announced a strategic partnership in the ...

Tags: Kyma technologies, GaN, Quora

Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors

Jun 21, 2016

Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...

Tags: SiC, MOSFET, AlGaN

Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown

Apr 8, 2016

HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...

Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates

Apr 6, 2016

Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...

Tags: High-Efficiency Blue LEDs

Ultraviolet Photodetectors on Free-Standing Gallium Nitride

Dec 2, 2015

Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...

Tags: AlGaN, Ultraviolet photodetectors, HVPE

Low-Threading-Dislocation AlGaN Template for Ultraviolet Lasers

Nov 19, 2015

Sandia National Laboratories in the USA has reported aluminium gallium nitride (AlGaN) laser structures emitting ~350nm ultraviolet radiation from optical and electrical pumping [Mary H. Crawford et al, Appl. Phys. Express, vol8, p112702, ...

Tags: AlGaN, ultraviolet lasers, LEDs

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

Claiming Record 4.7kv Breakdown for Gallium Nitride P-N Diodes

Oct 15, 2015

Researchers in Japan have claimed record breakdown voltage combined with low on-resistance for vertical gallium nitride (GaN) p-n diodes fabricated on free-standing GaN substrates [Hiroshi Ohta et al, IEEE Electron Device Letters, published ...

Tags: GaN p-n diodes, GaN Free-standing, GaN substrates

Panasonic Develops GaN Diodes with High-Current Operations and Low Turn-on Voltage

Oct 12, 2015

Panasonic Corp of Osaka, Japan says that it has developed gallium nitride (GaN) diodes that can not only operate at a high current of 7.6kA/cm2 - four times greater than that tolerated by conventional silicon carbide (SiC) diodes with a ...

Tags: Panasonic, GaN Diodes

Tunnel Junction for Vertical-Cavity Surface-Emitting Laser

Sep 23, 2015

University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...

Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE

Demand for Larger Diameters to Boost GaN Substrate Market From $2.2bn in 2014 to $4bn by 2020

Sep 14, 2015

The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...

Tags: Diameters, GaN Substrate Market

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