GaN on Si articles & resources on Made-in-China.com

Plessey Orders Aixtron AIX G5+ C MOCVD System for GaN-on-Si Monolithic Micro-LEDs

Sep 21, 2018

Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has received an order for an AIX G5+ C Planetary Reactor metal-organic chemical vapor deposition (MOCVD) system from UK-based Plessey Semiconductors to boost its ...

Tags: micro-LED, LED

RF Power Amplifier Market to Grow From $3bn by 3.2X, at 12.2% CAGR, Through 2028

Sep 17, 2018

The approximately $3bn RF power amplifier market is poised to expand at a robust compound annual growth rate (CAGR) of 12.2% over 2018-2028, as the widening expansion of 5G cellular networks will remain the main driver of RF power amplifier ...

Tags: Power electronics

Plessey and JDC Collaborate on Tailored Backplane for Monolithic Micro-LED Displays

Sep 17, 2018

Plessey Semiconductors Ltd of Plymouth, UK has announced a strategic partnership for its own monolithic micro-LED displays – manufactured on its proprietary gallium nitride on silicon (GaN-on-Si) wafers – to be driven by the ...

Tags: Micro-LED Displays

EpiGan Showcasing GaN Epiwafer Solutions for 5G

Aug 31, 2018

In booth J2554 of its local agent APEC at the SEMICON Taiwan show in Taipei (5-7 September) and in booth 354 at European Microwave Week (EuMW 2018) in Madrid, Spain (23-28 September), EpiGaN nv of Hasselt, near Antwerp, Belgium - which ...

Tags: GaN Epiwafer, epitaxial wafer

Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

Plessey Demos Microled-Based AR and VR Hud Concept at CES

Jan 19, 2018

Plessey Semiconductors Ltd of Plymouth, UK has demonstrated how its monolithic microLED technology can be used to deliver the next-generation of head-up displays (HUDs), enabling new augmented reality (AR) and virtual reality (VR) ...

Tags: microLED, displays

Macom's RF Energy Toolkit Now Available for Commercial OEMs Designing GaN-on-Si-Based RF Systems

Oct 11, 2017

M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) says that its RF Energy Toolkits are now available for order, ...

Tags: RF Systems, Macom

Laytec Ships in-Situ Metrology System to GaN-on-SiC Customer

Oct 10, 2017

In-situ metrology system maker LayTec AG of Berlin, Germany recently shipped a comprehensive EpiCurve TT/Pyro 400 in-situ metrology hybrid system to an industrial customer in North America. The metrology station combines automated in-situ ...

Tags: MOCVD, GaN-on-SiC

Qorvo Launches Dual-Transistor GaN-on-Sic Asymmetric Doherty Amplifier Module for Macro Base-Stations

Aug 14, 2017

Qorvo Inc of Greensboro, NC, USA (which provides core technologies and RF solutions for mobile, infrastructure and defense applications) has launched an asymmetric Doherty amplifier enabling ultra-high levels of power efficiency in the ...

Tags: Qorvo, GaN, RF, GaN-on-SiC

Allos Challenges Conventional Beliefs of GaN-on-Si

Aug 2, 2017

In the presentation ‘Low vertical leakage current of 0.07μm/mm2 at 600V without intentional doping for 7μm-thick GaN-on-Si’ at the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France ...

Tags: technology engineering, epiwafer

MACOM Demos RF Energy Toolkit to Speed Time-to-Market of GaN-on-Si-Based RF Systems for Commercial Applications

Jun 21, 2017

MACOM Technology Solutions Holdings Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, millimeter-wave and photonic applications) has unveiled a development kit targeted at helping ...

Tags: RF Systems, power transistors

China's Launches First Automotive Lighting Plant

Nov 16, 2016

Jiangxi Luye Auto Lighting launched the first automotive lighting LED module plant in Nanchang Optical Valley in China, reported Xinhua. The LED automotive module manufacturing facility values RMB 500 million (US $72.97 million) in total, ...

Tags: Auto Lighting, LED Lighting

Plessey Launches Beam-Forming Led Module Using Stellar Optical Technology

Oct 12, 2016

UK-based LED maker Plessey has announced the first standard LED module based on its Stellar beam-forming technology. The new standard module is said to open up opportunities for creativity in industrial and architectural lighting design. ...

Tags: Plessey, first standard LED module, Stellar beam-forming technology

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Sep 9, 2016

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

MACOM Showcasing Dc-100ghz MMICs atEuMW

Sep 9, 2016

In booth #207 at European Microwave Week (EuMW 2016) at ExCel London, UK (4–6 October), MACOM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...

Tags: EuMW 2016, MACOM, MMICs

GaN on Si

Related Products