Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of ...
Arkansas Power Electronics International Inc (APEI) of Fayetteville, AR, USA, a developer of technology for power electronics systems, electronic motor drives and power electronics packaging, and GaN Systems Inc of Ottawa, Ontario, Canada, ...
Tags: APEI, GaN Systems, Electronics
Semiconductor of Phoenix,AZ,USA,which supplies silicon-based power and signal management,logic,discrete and custom devices for energy-efficient electronics,has joined the multi-partner,industrial R&D program at nanoelectronics research ...
Tags: semiconductor, USA, signal, GaN
Japan’s Fujitsu Semiconductor says it has achieved high output power of 2.5kW in server power -supply units equipped with gallium nitride (GaN) power devices built on a silicon substrate. The firm will exhibit the device for the ...
Tags: Fujitsu, GaN HEMT, Semiconductor, power devices, GaN technology
RF Micro Devices Inc of Greensboro,NC,USA has been awarded a$2.1m contract from the US Defense Advanced Research Projects Agency(DARPA)to enhance the thermal efficiency of gallium nitride(GaN)circuits used in high-power radar and other ...
Tags: RFMD, GaN technology, DAPPA, NJTT, military system
ON Semiconductor (Nasdaq: ONNN), a premier global supplier of high performance silicon solutions for energy efficient electronics, has joined the multi-partner, industrial research and development program at imec, a leading nanoelectronics ...
Tags: GaN-on-Si
RFMD's quarterly revenue and margins grow,driven by diversified markets For its fiscal first-quarter 2013(to end-June 2012),RF Micro Devices Inc of Greensboro,NC,USA has reported revenue of$202.7m.This is down 5.4%on$214.2m a year ago but ...
Tags: RFMD, quarterly revenue, CPG, non-GAAP basis, power amplifiers
The Gallium Nitride (GaN) semiconductor device market is expected to reach $12.6m by the end of 2012, and the phenomenal growth rate of 60-80% year-on-year is expected to continue in subsequent years, according to the report ‘Gallium ...
Tags: Raw material, GaN
The Institute of Microelectronics(IME),a research institute of Singapore's Agency for Science,Technology and Research(A*STAR),has announced a collaboration with global power systems company Rolls-Royce for R&D on advanced power electronics ...
Tags: GaN-Based, Electronics, Power
Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...
Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN