Germanium articles & resources on Made-in-China.com

GlobalFoundries Unveils Roadmap for Next-Generation 5G Mmwave Applications

Oct 17, 2017

GlobalFoundries of Santa Clara, CA, USA (one of the world’s largest semiconductor foundries, with more than 250 customers and operations in Singapore, Germany and the USA) has announced its vision and roadmap for a range of technology ...

Tags: semiconductor, wireless networks

Solar-Tectic Granted US Patent for Low-Cost, High-Efficiency III-V Thin-Film Tandem Solar Cell on Glass Substrate

Oct 10, 2017

Solar-Tectic LLC of Briarcliff Manor, NY, USA says that the US Patent and Trademark Office has granted it US patent 15/205,316 ‘Method of Growing III-V Semiconductor Films for Tandem Solar Cells’ for high-efficiency and ...

Tags: Thin-film PV, Glass Substrate

AXT Completes Purchase of New Manufacturing Facility in Dingxing, China

Sep 13, 2017

AXT Inc of Fremont, CA, USA - which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has completed the purchase of its new manufacturing facility in the city of Dingxing, China. ...

Tags: gallium arsenide, indium phosphide

Monolithic Electrically Injected Microdisk Lasers on Silicon

Aug 1, 2017

Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...

Tags: silicon photonics, Lasers

Imec Demos First Sub-10nm Germanium Gate-All-Around FETs

Jun 16, 2017

At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium unveiled new process improvements for next-generation devices. For the first time it ...

Tags: Imec, transistors

Imec Achieves Record-Low Source/Drain Contact Resistivity for PMOS Transistors

Jun 16, 2017

At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium reported record values below 10-9Ω.cm2 for PMOS source/drain contact ...

Tags: PMOS Transistors, wafers

Sivers IMA Uses SiGe to Launch First Transceiver Chip Supporting FCC's New V-Band

Oct 12, 2016

At European Microwave Week (EuMW 2016) in London, UK (4–6 October), Sivers IMA of Kista, north of Stockholm in Sweden (which makes microwave and millimeter-wave components used in telecom links, radar sensors and test & measurement ...

Tags: Sivers IMA, EuMW 2016, V-Band

5N Plus Consolidating Operations

Oct 12, 2016

Specialty metal and chemical products firm 5N Plus Inc of Montreal, Québec, Canada says that it intends to consolidate its operations at Wellingborough, UK with other sites within the group. In addition, in the USA, it will ...

Tags: 5N Plus, consolidating operations

Power Amplifier Market Growing at CAGR of Nearly 14% to 2020

Oct 8, 2016

The global power amplifier market will increase at a compound annual growth rate (CAGR) of nearly 14% from 2016-2020, according to a report from Technavio that provides an analysis of the most important trends expected to impact the market. ...

Tags: power amplifier, CAGR

Reducing Subthreshold Swing of Gallium Arsenide Transistors

Sep 28, 2016

Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...

Tags: KIST, GaAs, FET

Indium Gallium Nitride Solar Cells with Positive Temperature Coefficient

Sep 20, 2016

Researchers in China have developed indium gallium nitride (InGaN) photovoltaic devices that increase in efficiency with temperature up to 423K [Zhaoying Chen et al, Appl. Phys. Lett., vol109, p062104, 2016]. "The positive efficiency ...

Tags: InGaN solar cells InGaN, MOCVD, positive temperature coefficient

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

MIT and Masdar Develop Photovoltaic 'step Cell'

Sep 9, 2016

A team of researchers at the USA's Massachusetts Institute of Technology (MIT) and the Masdar Institute of Science and Technology in Abu Dhabi, United Arab Emirates has developed a new solar photovoltaic 'step cell' that combines two ...

Tags: MIT, step cell, Masdar

RASIRC Renews Funding for ALD Research at UCSD

Sep 7, 2016

RASIRC Inc of San Diego, CA, USA (whose products purify and deliver ultra-pure liquids and gases) has renewed its funding agreement with the University of California, San Diego (UCSD) for on-going semiconductor processing research. The gift ...

Tags: RASIRC, UCSD, ALD

AXT's Q2 Revenue up 9.6%, Driving Higher-Than-Expected Profit

Aug 2, 2016

For second-quarter 2016, AXT Inc of Fremont, CA, USA – which makes gallium arsenide (GaAs), indium phosphide (InP) and germanium (Ge) substrates and raw materials – has reported revenue of $20.5m, down slightly on $21m a year ...

Tags: raw materials

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