Light Emitting Devices articles & resources on Made-in-China.com

Correcting Charge Polarization Calculations for III-Nitrides

Jul 7, 2016

Researchers at University of California Santa Barbara (UCSB) and Rutgers University in the USA believe that charge polarization in III-nitride materials has not been adequately understood up to now [Cyrus E. Dreyer et al, Phys. Rev. X vol6, ...

Tags: semiconductors, Electronics

Europe's TOP-HIT Transfer Printing Consortium to Boost Large-Scale Heterogeneous Integration of Diverse Materials and Devices

Jun 3, 2016

Ireland's Tyndall National Institute (based at University College Cork) is leading the European consortium TOP-HIT (Transfer-print OPerations for Heterogeneous INtegration) to develop novel technology that will address the challenge of ...

Tags: Transfer Printing, integrating components

Functional Printing To Shine At Drupa 2016

Mar 23, 2016

Functional printing will be a big focus at global printing trade fair drupa in May. The European Specialist Printing Manufacturers Association will host a pavilion dedicated to functional and industrial printing, with member companies ...

Tags: Drupa 2016, Printing

Current Status of Phosphorescent Organic Light-Emitting Devices

Feb 17, 2016

Organic light-emitting devices (OLEDs) have arrived. The unsurpassed visual performance and slim form factors of OLED products have been warmly welcomed by consumers. You can find glass-based AMOLED (active-matrix OLED) displays in a range ...

Tags: Light-Emitting Devices, Lighting, OLED products

UCLA Study Finds Multilayer MoS2 as Potential New LED Material

Nov 19, 2015

Over the last decade, advances in the technology of light-emitting diodes, or LEDs, have helped to improve the performance of devices ranging from television and computer screens to flashlights. As the uses for LEDs expand, scientists ...

Tags: LEDs, MoS2, LED Material

CNSI at UCLA Demonstrated The First Electroluminescence From MoS2

Jul 27, 2015

The California NanoSystems Institute (CNSI) at University of California Los Angeles (UCLA) has demonstrated the first electroluminescence from multi-layer molybdenum disulphide (MoS2), which could lead to a new class of materials for making ...

Tags: electronics, semiconductor, Molybdenum disulfide

UCSB in The USA Has Improved Hole Concentrations in p-GaN

Jun 19, 2015

University of California Santa Barbara (UCSB) in the USA has improved hole concentrations in p-type gallium nitride (p-GaN) by using indium as a surfactant in ammonia-based molecular beam epitaxy (NH3MBE) [Erin C. H. Kyle et al, Appl. Phys. ...

Tags: Gallium Nitride, Indium Surfactant

Seren Photonics Won an Award for Best Business and Investment Opportunity

Jun 1, 2015

Seren Photonics Ltd of Pencoed Technology Park, UK, which was spun off from the University of Sheffield in 2009 with funding from venture capital firm FusionIP plc (now part of IPGroup plc), was one of six firms to win an award for best ...

Tags: LEDs, White LEDs, Semi-polar nitride semiconductor

A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates

Mar 24, 2015

Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...

Tags: PAMBE GaN InN InGaN Silicon substrate

Flexible OLED Panels

Feb 3, 2015

This is LG company launched a new type of polymer substrate based flexible OLED lighting slab - like a glowing cloud, seems to need the wind gently only a burst of breeze, it can wriggle out those the lithe and graceful dance ~ It is only ...

Tags: Oled, OLED Panels, Display, OLED lighting

NSF Promotes an Interdisciplinary Approach to Address Fundamental Problems in Science

Jan 7, 2015

The Center for Nanoscale Science, a US National Science Foundation-funded Materials Research Science and Engineering Center (MRSEC) at Penn State University, has been awarded a six-year, $15m grant to continue research on materials at the ...

Tags: Nanoscale Science, materials research, Electrical

GaN Micro-Rods Grown on Graphene Yield Flexible LEDs

Sep 26, 2014

Currently, most flexible electronic and optoelectronic devices are fabricated using organic materials. However, for these devices inorganic compound semiconductors such as gallium nitride (GaN) can provide advantages over organic materials ...

Tags: LEDs, LED displays, Electrical, Electronics

Fukuda Crystal Lab Grown Scandium Aluminium Magnesium Oxide Crystal with a Diameter

Aug 22, 2014

Fukuda Crystal Laboratory Co Ltd has grown ScAlMgO4 scandium aluminium magnesium oxide (SCAM) crystal with a diameter of 50mm (2 inches) that could be used as a substrate for gallium nitride (GaN)-based light-emitting devices such as blue ...

Tags: Fukuda Crystal Lab, a diameter, Electrical

IBM Developed a Technique to Grow Hexagonal

Apr 17, 2014

IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...

Tags: IBM GaN GaN-0n-Si CMOS MOCVD, Electrical, Electronics

Researchers in France Have Developed a Technique to Directly Grow Graphene

Mar 13, 2014

Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...

Tags: Electrical, Electronics

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