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MOCVD Reactor
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CST Global and University of Glasgow Join Forces to Install and Operate MOCVD System
Aug 14, 2017III-V optoelectronic foundry Compound Semiconductor Technologies Global Ltd (CST Global) of Hamilton International Technology Park, Blantyre, near Glasgow, Scotland, UK (a subsidiary of Sweden-based Sivers IMA Holding AB) has announced a ...
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Allos Challenges Conventional Beliefs of GaN-on-Si
Aug 2, 2017In the presentation ‘Low vertical leakage current of 0.07μm/mm2 at 600V without intentional doping for 7μm-thick GaN-on-Si’ at the 12th International Conference on Nitride Semiconductors (ICNS-12) in Strasbourg, France ...
Tags: technology engineering, epiwafer
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San'an First to Qualify New Aixtron Showerhead 19X2''-Wafer MOCVDReactor for DUV LED Production
Aug 2, 2017Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that San’an Optoelectronic Co Ltd (China’s largest LED maker) has completed the qualification of its Close Coupled Showerhead (CCS) process ...
Tags: LEDs, LED products
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Seren Photonics and Bluglass Collaboration Results in Successful Semipolar GaN Template Process Transfer
Jun 8, 2017Seren Photonics Limited, based near Cardiff, Wales, UK, a developer of semipolar gallium nitride and BluGlass Limited of Silverwater, Australia, a developer of semiconductor manufacturing process and equipment have announced the completion ...
Tags: Seren Photonics, LED
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LayTec Adds Nanoscale SPC for Quaternary Films to Epinet 2016 Analysis Software
Jul 27, 2016In its newsletters in April 2016 and June 2015 in-situ metrology system maker LayTec AG of Berlin, Germany reported on x-ray diffraction (XRD)-gauged nk database improvements for InGaAsP (indium gallium arsenide phosphide) and InGaAlAs ...
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Laytec Offers Epitt 280nm Reflectance Channel to Sense Algan Surface Morphology in UV-C LED EPI
Jun 30, 2016Aluminium gallium nitride (AlGaN) buffer layers with high aluminium content are necessary for optimal UV-C LED performance. But their band-edge lies below 300nm, so established 405nm in-situ reflectance is insensitive to the surface ...
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LayTec Receives First Order for Epitt/Vcsel
Jun 30, 2016In-situ metrology system maker LayTec AG of Berlin, Germany says that, following the request of customers and utilizing the modular concept of its new Gen3 in-situ platform, it has customized and expanded the related in-situ metrology ...
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UCSB's Solid State Lighting & Energy Electronics Center Selects Nippon Sanso's SR-4000HT MOCVD Reactor For UVC-LED Development
Mar 21, 2016Matheson Tri-Gas Inc of Basking Ridge, NJ, USA, together with its parent company Taiyo Nippon Sanso Corp (TNSC) of Tokyo, Japan, says that the Solid State Lighting & Energy Electronics Center (SSLEEC) at the University of California, Santa ...
Tags: Matheson, Taiyo Nippon Sanso, MOCVD, UVC LEDs
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Aixtron Receives CS High-Volume Manufacturing Award For AIX G5+C GaN-on-Si MOCVD Production System
Mar 9, 2016Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany received the CS High-Volume Manufacturing Award 2016 for its new fully automated AIX G5+ C metal-organic chemical vapor deposition (MOCVD) system at this year's CS ...
Tags: Aixtron, MOCVD, CS industry Awards, GaN-on-Si
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Veeco Delivers 50th EPIK 700 MOCVD Reactor in 2015
Nov 13, 2015Veeco Instruments Inc. (Nasdaq:VECO) announced today that it has shipped the 50th TurboDisc® EPIK™700 GaN Metal Organic Chemical Vapor Deposition (MOCVD) System reactor since its introduction ten months ago. After its launch in ...
Tags: Veeco, MOCVD system, reactor
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Veeco Instruments Shipped The 50th Turbodisc Epik 700 GaN MOCVD Reactor
Aug 4, 2015Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has shipped the 50th TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) reactor since the system's ...
Tags: LED wafer, GaN MOCVD Reactot
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220 GaN MOVCD Reactor Will Be Installed in 2015
Apr 2, 2015Due to the major aggressive expansion plans of some Chinese LED companies, 220 gallium nitride (GaN) metal-organic chemical vapour deposition (MOCVD) reactors will be installed in 2015, according to the latest data from the IHS LED ...
Tags: GaN MOCVD LEDs Epistar Sanan OptoElectronics, LED companies, Electronics
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K-Space and CNSE Announced a Joint Collaborative Effort in III-Nitride Materials Research
Jan 19, 2015k-Space Associates Inc of Dexter, MI, USA (which supplies instrumentation and software for surface science and thin-film technology applications) and the Colleges of Nanoscale Science and Engineering (CNSE) at SUNY Polytechnic Institute ...
Tags: III-nitride materials research, growth parameters, Electrical
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NCSU Has Been Developing Homo-Epitaxy of Non-Polar AIN with a View to DUV
Oct 30, 2014North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED
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The LED Front-End Equipment Market Experienced an Unprecedented Investment Cycle
May 28, 2014Driven by the fanfare over (and overestimation of) the LCD display market, the LED front-end equipment market experienced an unprecedented investment cycle in 2010-2011. The market surge was driven mostly by MOCVD reactor shipments to new ...
Tags: General Lighting, LED TV
