RF Micro Devices Inc of Greensboro,NC,USA says that its new RF5836 provides a complete integrated solution in a single front-end module(FEM)for WiFi 802.11a/n systems. The RF5836 integrates a 5GHz power amplifier(PA),single-pole ...
Tags: Front-End Module, Power Amplifier, Mobile Devices, Consumer Electronics
Silicon Valley-based Gaas Labs LLC,a private investment fund targeting the communications semiconductor market,has acquired privately held Nitronex Corp of Durham,NC,USA,which designs and makes gallium nitride(GaN)-based RF power ...
Tags: Gaas Labs, Nitronex, GaN-on-Si, RF power transistors, semiconducto
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium (IMS) in Montreal, Canada (17-22 June), RF Micro Devices Inc of Greensboro, NC, USA has launched the RFVA0016 — a highly integrated broadband quarter-watt (1/4W) ...
Tags: RFMD, International, applications
18 June 2012 RFMD adds 280W GaN matched power transistor family,targeting pulsed-radar RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1025,a highly efficient 280W pulsed gallium nitride(GaN)RF matched power transistor ...
Tags: RFMD, GaN, GaN power transistor, the RFHA1025, IMS, semiconductor
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFVA0016,an integrated,analog-controlled,variable-gain amplifier(VGA)for broadband applications with external matching,allowing operation in all bands from 400MHz to 2700MHz with a ...
Tags: RFMD, VGA, Broadband Applications
RF Micro Devices Inc of Greensboro,NC,USA says that its Foundry Services business unit has updated its process design kits(PDKs)for use with Agilent Technologies Inc's Advanced Design System(ADS)2011 electronic design ...
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF Micro Devices Inc of Greensboro,NC,USA is showcasing its broad portfolio of products and technologies for the wireless and wired ...
In booth 1210 at the 2012 IEEE MTT-S International Microwave Symposium(IMS)in Montreal,Canada(17-22 June),RF Micro Devices Inc of Greensboro,NC,USA has launched four RF front-end modules(FEMs)for next-generation WiFi applications.The ...
Tags: RFMD, WiFi, FEM, IMS, WiFi applications
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFPA1012 linear power amplifier,designed specifically for wireless infrastructure applications. Using a gallium arsenide(GaAs)heterojunction bipolar transistor(HBT)fabrication ...
Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has completed its acquisition(announced on 5 June)of the entire in-house molecular beam epitaxy(MBE)epiwafer manufacturing unit of RF Micro Devices Inc of ...
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFHA1006,a wideband power amplifier designed for continuous-wave(CW)and pulsed applications including:class AB operation for public mobile radio;power amplifier stages for ...
5 June 2012 IQE acquires RFMD's MBE unit and secures seven-year wafer supply agreement Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK has signed what is described as a multi-faceted agreement to acquire the entire ...
Tags: IQE, RFMD MBE, GaAs, wireless semiconductor industry
4 June 2012 Handset RF device market to grow from$3.8bn to$5bn in 2016 As handset RF front ends(containing gallium arsenide)are becoming increasingly sophisticated in the 4G era,they cost$9-11 for 4G devices,which is twice that for 3G and ...
A little bit of semiconductor magic made a lot of difference to RF power amplifiers,and looks like it will do the same for mains PSUs. That magic is the'two-dimensional electron gas'that forms between layers in certain semiconductor ...
Tags: GaN, semiconductor, RF power amplifiers, GaAs, SiC, PSU, JFET
RF Micro Devices Inc of Greensboro,NC,USA has launched the RFFM7600 front-end module(FEM),which contains an integrated three-stage power amplifier(PA)with Tx harmonic filtering and Tx/Rx switching.The RFFM7600 is provided in a 6mm x 6mm ...
Tags: RFMD, FEM, 5V, 2.5-2.7GHz high-power front-end module, LTE/WiMAX, USA