SEM articles & resources on Made-in-China.com

How to Develop a Product in China

May 20, 2019

1. Design So you have an idea for a product and you’re looking to get it developed and manufactured in China. Many people from around the world have the same idea every year. Getting your project successfully produced by Chinese ...

Tags: CAD;3D printing;

Toray Plastics (America) Unveils Lab Analysis Services for Packaging and Industrial Films

Jun 8, 2017

Toray Plastics (America) is now offering its analytic testing of films, laminations, and finished printed structures to all consumer packaged goods companies and converters. Toray’s wide array of sophisticated lab equipment and ...

Tags: Toray Plastics, Packaging

Oxford Instruments Develops SiC Via Etch for GaN-on-SiC RF Device Manufacture

Oct 12, 2016

UK-based process equipment maker Oxford Instruments has announced the development and launch of a silicon carbide (SiC) via plasma etch process using its PlasmaPro100 Polaris etch system. SiC is becoming an increasingly important ...

Tags: Oxford Instruments, SiC, GaN RF devices

Sun Chemical Opens New Coatings Lab in Carlstadt Facility, US

Aug 8, 2016

Sun Chemical has opened a new coatings lab at its research and development facility in Carlstadt, New Jersey, US. The new lab will enable Sun Chemical to provide enhanced services to the graphic arts and packaging markets. Featuring ...

Tags: Sun Chemical, laminating adhesives, glass decoration

UIUC Uses MOCVD Growth of Cubic GaN on Silicon to Boost Efficiency and Brightness of Green LEDs

Aug 3, 2016

Researchers at the University of Illinois at Urbana Champaign (UIUC) say that they have developed a new method for making brighter and more efficient green LEDs (R. Liu and C. Bayram, 'Maximizing cubic phase gallium nitride surface coverage ...

Tags: Green LEDs, MOCVD

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Apr 29, 2016

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

Wolfspeed's GaN RF Devices Demonstrate Reliability for Harsh Space Environments

Apr 15, 2016

Wolfspeed of Research Triangle Park, NC, USA – a Cree Company that makes silicon carbide (SiC) and gallium nitride (GaN) wide-bandgap semiconductor devices – says that its GaN-on-SiC RF power transistors have completed testing ...

Tags: Wolfspeed, Harsh Space Environments

Gallium Nitride Nano-Sized LEDs

Apr 11, 2016

In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...

Tags: LED, Nobel Prize

Direct Growth Of III-V Quantum Dot Lasers On Silicon Substrate

Mar 15, 2016

Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...

Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Dec 2, 2015

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon

Jun 16, 2015

KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...

Tags: corrugated epitaxial, silicon

IBM Developed a Process for Growing Compound Semiconductor Crystals

Jun 12, 2015

A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...

Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM

265nm-Wavelength LEDs Is More Powerful and Efficient

Apr 22, 2015

Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...

Tags: DUV LEDs, DUV devices

A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates

Mar 24, 2015

Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...

Tags: PAMBE GaN InN InGaN Silicon substrate

Zhejiang University Jointly Developed UV-LEDs Based on Schottky Junctions

Mar 5, 2015

Zhejiang University in China and University of Cambridge in the UK have jointly developed ultraviolet light-emitting diodes (UV-LEDs) based on metal-semiconductor Schottky junctions between silver nanowires (AgNWs) and gallium nitride (GaN) ...

Tags: Schottky UV-LEDs, medical diagnostics

SEM

Related Products