Semiconductor LEDs articles & resources on Made-in-China.com

Epistar Are Developing a Method to Transfer InGaN

Feb 21, 2014

Researchers associated with Taiwan National Central University and Epistar Corp are developing a method to transfer indium gallium nitride (InGaN) light-emitting diodes (LEDs) to ceramic aluminium nitride (AlN) substrates for high-voltage ...

Tags: InGaN LED, Ceramic Substrate

Seoul Semiconductor Was The Only One Selected by The Institute of IEEE

Jan 2, 2014

South Korean LED maker Seoul Semiconductor says that, among companies that make LED components only, it was the only one selected by the Institute of Electrical and Electronics Engineers (IEEE) in the top 20 of its 2013 Semiconductor ...

Tags: Semiconductor LEDs, Patent Power Ranking

Academy Developed an Electrically Driven Color-Tunable Light-Emitting Diode

Nov 5, 2013

Chinese Academy of Sciences' Semiconductor Lighting R&D Center at the Institute of Semiconductors in Beijing has developed an electrically driven color-tunable light-emitting diode (LED) based on indium gallium nitride (InGaN) quantum wells ...

Tags: LED, Electrical, Electronics, Semiconductor

LG Used AlGaN Superlattice Structures

Oct 29, 2013

LG Electronics Materials and Components Laboratory in South Korea has used aluminium gallium nitride (AlGaN) superlattice structures (SLs) to improve lateral current spreading from the n-side of nitride semiconductor light-emitting diodes ...

Tags: Nitride LEDs, Light

University of California Santa Barbara Has Been Exploring The Use of Laser Diodes

Oct 22, 2013

University of California Santa Barbara has been exploring the use of laser diodes (LDs) in combination with phosphors as a means to produce white light [Kristin A. Denault et al, AIP Advances, vol3, p072107, 2013]. Commercial 'white' ...

Tags: Near-UV LD, Blue LD, LED, Electrical, Electronics

Azzurro Semiconductors AG Reported Uniformity Measurements for InGaN

Sep 27, 2013

Germany's Azzurro Semiconductors AG has reported uniformity measurements for indium gallium nitride (InGaN) light-emitting diodes on large-diameter silicon substrates up to 200mm [Andrea Pinos, etal, Appl. Phys. Express, vol6, p095502, ...

Tags: InGaN Silicon substrates, LED, Electrical, Electronics

China Have Been Exploring The Potential for Improved Light Extraction

Sep 4, 2013

Researchers in Guangdong province, China, have been exploring the potential for improved light extraction from nitride semiconductor light-emitting diodes (LEDs) on patterned sapphire substrates with spherical cap bumps [Haiyan Wang et al, ...

Tags: LEDs, Electrical, Electronics

Ohio State University Is Proposing The Use of a Newly Developed Tunnel Junction

Sep 2, 2013

Ohio State University is proposing the use of a newly developed tunnel junction as a means to ameliorate the effects of efficiency droop in nitride semiconductor light-emitting diodes (LEDs) and other optoelectronic devices [Fatih Akyol et ...

Tags: LED, Electrical, Electronics

Researchers in South Korea and USA Have Been Developing Graded

Aug 23, 2013

Researchers in South Korea and USA have been developing graded-composition superlattice electron-blocking layers (GSL-EBLs) for nitride semiconductor light-emitting diodes (LEDs) [Jun Hyuk Park et al, Appl. Phys. Lett., vol103, p061104 ...

Tags: LED, droop GaN EBL, Electrical, Electronics, nitride semiconductor

An Electric Field Develops in The P-Type Region of The Device

Aug 15, 2013

Researchers based in the USA and Korea have found "an unequivocal correlation between the onset of high injection and the onset of the efficiency droop" of gallium indium nitride (GaInN) light-emitting diodes (LEDs) [David S. Meyaard et al, ...

Tags: LED, Nitride LED, Electrical, Electronics

The First Silicon Substrate Green and Yellow Nitride Semiconductor LEDs

Jun 21, 2013

It is reported that Hong Kong University of Science and Technology (HKUST) has developed silicon substrate green and yellow nitride semiconductor LEDs. Details of the development were published in the May 29th issue of IEEE Electronic ...

Tags: HKUST, Lighting, Semiconductor, LED

A New Semiconductor Device Capable of Emitting Two Distinct Colours Has Been Created

May 6, 2013

A new semiconductor device capable of emitting two distinct colours has been created by a group of researchers in the US, potentially opening up the possibility of using LEDs universally for cheap and efficient lighting. The ...

Tags: LED Dual-color Lasers, LED Lightin, LED

Tsing Hua Has Been Studying Ways to Improve The Modulation Performance

Apr 11, 2013

Taiwan National Tsing Hua University has been studying ways to improve the modulation performance of high-output-power nitride semiconductor light-emitting diodes (LEDs) [Chien-Lan Liao et al, IEEE Electron Device Letters, published online ...

Tags: GaN InGaN LEDs, LED, Electrical, Electronics, taiwan

Seoul Semiconductor Optimized for The Fast-Growing Smart-Phone

Mar 18, 2013

South Korean LED maker Seoul Semiconductor Co Ltd has launched a 0.6T side-view LED, optimized for the fast-growing smart-phone and tablet (phablet) market, which requires high brightness and high efficacy. The 0.6mm (tall) LED delivers 8.8 ...

Tags: Semiconductor LEDs, Semiconductor, LED

There Are Two Primary Ways of Producing White Light-Emitting Diodes (Wleds)

Dec 28, 2012

White light There are two primary ways of producing white light-emitting diodes (WLEDs), LEDs that generate high-intensity white light. One is to use individual LEDs that emit three primary colors— red, green, and blue — and ...

Tags: White LED

Semiconductor LEDs

Related Products