Wide-bandgap semiconductor materials such as gallium nitride (GaN) offer far higher performance than traditional silicon but cost significantly more. However, by 2020 GaN costs will drop enough for it to become competitive based on ...
Tags: Bulk GaN, traditional silicon, gallium nitride, reckons market
Source: Toshiba Toshiba’s white LED package Toshiba Corporation will begin mass production of white LEDs on 200mm silicon wafers this month based on technology that it licensed and developed with Californian firm Bridgelux. ...
Tags: Toshiba, Lighting, Gan on Si Led, Lights
Toshiba Corporation today announced that the company will start sales of white light-emitting diode (LED) packages that offer makers of general purpose and industrial LED lighting solutions a cost-competitive alternative to current LED ...
Tags: LEDs Lighting, Toshiba, Lights, Mass Production
Toshiba Corporation announced that the company will start sales of white light-emitting diode (LED) packages that offer makers of general purpose and industrial LED lighting solutions a cost-competitive alternative to current LED packages. ...
Tags: Japan Toshiba Bridgelux White LED Packages, LED Package, LED CHIP
Large-scale adoption of retrofit LED lamps are forecasted to lead to $100 billion in global energy savings over the next five years, according to a recent report from IMS Research entitled, "Opportunities for Power Components in LED ...
Tags: LED lamp
Due to the global economic downturn, demand for LED lighting has been weakening. Meanwhile, efficiency and price-performance ratio have been increasing, and the penetration rate of the LED lighting market is expected to continue rising. ...
Tags: Bridgelux, LED chipmaker, LED lighting, efficiency, price-performance
Researchers based in France and Germany have developed techniques for growing indium arsenide (InAs) channel structures on silicon [L. Desplanque et al, Appl. Phys. Lett., vol101, p142111, 2012]. Room-temperature mobility for the epitaxial ...
Tags: growing indium arsenide, InAs, chemicals
Due to the global economic downturn,demand for LED lighting has been weakening.Meanwhile,efficiency and price-performance ratio have been increasing,and the penetration rate of the LED lighting market is expected to continue rising.Market ...
Tags: global economic downturn, LED lighting, brightness efficiency
Japan’s Fujitsu Semiconductor says it has achieved high output power of 2.5kW in server power -supply units equipped with gallium nitride (GaN) power devices built on a silicon substrate. The firm will exhibit the device for the ...
Tags: Fujitsu, GaN HEMT, Semiconductor, power devices, GaN technology
GaN-on-Si is a new technology that has the potential to replace sapphire substrates in the LED supply chain. Erwin Ysewijn, vice president of sales and marketing at Azzurro Semiconductors, a Germany-based GaN-on-Si supplier, recently ...
Tags: led
Osram Opto Semiconductors has developed the Oslon Compact LED for automotive headlight design. Its small size and high light output enable a single LED type to be used as the default light source for all automotive forward lighting ...
Tags: LED
9 October 2012 IQE's III-V-on-Si laser materials enable next-gen hard disk drive technology Epiwafer foundry and substrate maker IQE plc of Cardiff,Wales,UK says that it has produced epitaxial wafers combining the optical properties of ...
Tags: IQE III-V-on-Si, laser material, next-gen hard disk drive technology
The next technological challenge for the Solid-state lighting industry is the transition to silicon wafers. Everybody knows that silicon offers many advantages in terms of cost and availability. Nevertheless, the changeover bears many ...
Tags: LED
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors
UK-based Plessey Semiconductors Ltd has taken delivery of a CRIUS II-XL metal-organic chemical vapor deposition (MOCVD) reactor (in 7x6-inch wafer configuration) from deposition equipment maker Aixtron SE of Herzogenrath, Germany (which ...
Tags: MOCVD