Xidian University in China has used pulsed metal-organic chemical vapor deposition (MOCVD) to increase indium gallium nitride (InGaN) room-temperature channel mobility to 1681cm2/V-s, which is claimed to be a record [Yachao Zhang et al, ...
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
Xidian University has developed a nitride semiconductor field-plated metal-insulator-semiconductor high-electron-mobility transistor (FP MIS-HEMT) with ‘negligible’ current collapse, along with high maximum current and enhanced ...
Tags: Silicon Nitride, Electrical
Speech by the Governor Shaanxi is the important cradle of Chinese civilization. It was the seat of capitals of 13 ancient dynasties including Zhou, Qin, Han and Tang dynasty and also was China's political, economic and cultural center for ...
Tags: Shananxi, business, introduction to Shananxi, Shananxi economy, survey