In booth #1A32 at the China International Optoelectronic Exposition (CIOE 2018) in Shenzhen, China (5–8 September) and in booth #579 at the European Conference on Optical Communication (ECOC 2018) in Rome, Italy (24–26 ...
Tags: CWDM Modules, Chipset
Engineered materials and optoelectronic component maker II-VI Inc of Saxonburg, PA, USA (which makes high-power semiconductor laser components) has announced the commercial availability of its actively cooled laser bars, emitting 200W of ...
At the 2017 edition of EMO, also known as Exposition de la Machine-Outil (Machine Tool World Exposition) and held on September 18th through September 23rd as the world's largest machine tool exhibition, exhibitors from Taiwan, the ...
Tags: Machine Tool, EMO Show
Pasternack Inc of Irvine, CA, USA (which makes both passive and active RF, microwave and millimeter-wave products) has launched a new line of E- and W-band PIN diode waveguide switches. The single-pole single-throw (SPST) and double-pole ...
Tags: Pasternack, Switches
In hall B2, booth 350 at the Laser World of Photonics 2017 trade show in Munich, Germany (26–29 June), Berlin-based Ferdinand-Braun-Institut, Leibniz-Institut für Hochstfrequenztechnik (FBH) – which offers the full value ...
Tags: FBH, UV LED Developments
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
University of Montpellier in France claims the first continuous-wave (cw) operation at room temperature of a 15μm indium arsenide (InAs) quantum cascade laser (QCL) [Alexei N. Baranov et al, Optics Express, vol. 24, p18799, 2016]. "To ...
Tags: University of Montpellier, InAs, MBE
By optimizing the material growth and manufacturing process, researchers at the China Academy of Engineering Physics' Research Center of Laser Fusion and the Institute of Applied Physics and Computational Mathematics in Beijing have nearly ...
Tags: Cascade Laser, ceramics
A team led by Alexander Spott of University of California, Santa Barbara – in collaboration with the US Naval Research Laboratory (NRL) and the University of Wisconsin, Madison – has fabricated what is said to be the first ...
Researchers in France claim the first demonstration of 10GHz large-signal microwave power performance for flexible aluminium gallium nitride (AlGaN) barrier high-electron-mobility transistors (HEMTs) [S. Mhedhbi et al, IEEE Electron Device ...
Researchers in the UK have claimed the first demonstration of laser diodes grown directly on silicon that perform up to 75°C and 120°C under continuous wave (cw) and pulsed operation, respectively [Siming Chen et al, Nature ...
Tags: Quantum dot lasers, GaAs, Silicon substrate, MBE
Yellow laser diodes with low thesholds have been produced by Jijun Feng (University of Shanghai for Science and Technology, China) and Ryoichi Akimoto (National Institute of Advanced Industrial Science and Technology (AIST), Japan) based on ...
Tags: Yellow lasers BeZnCdSe 560-590nm lasers, Ryoichi Akimoto, Electronics
FZLED, a leading maker of LED lighting product, is pleased to announce a family long lasting, lightweight, adjustable angle 8W 2-inch LED downlights - FZL-DL02-01 series. The downlight is easy to install and designed to be energy-saving ...
Tags: LED luminaire, LED downlight, FZ LED
Jijun Feng and Ryoichi Akimoto based in China and Japan have developed low-threshold green and green-yellow laser diodes (LDs) based on a beryllium zinc cadmium selenide (BeZnCdSe) quantum well [Appl. Phys. Lett., vol107, p161101, 2015]. ...
Tags: laser diodes, zirconium dioxide
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices