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Akhan Issued Japan Patent Covering Fabrication of Diamond Semiconductor Materials

Nov 16, 2017

AKHAN Semiconductor Inc of Gurnee, IL, USA, which specializes in the fabrication and application of lab-grown, electronics-grade diamond, says that the Japan Patent Office has issued it patent JP6195831 (B2) covering a method for the ...

Tags: electronics-grade diamond, automotive

Aluminium Nitride Schottky Barrier Diodes with Breakdown More Than 1kv

Aug 3, 2017

Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...

Tags: semiconductor, MOCVD

Imec Demos First Sub-10nm Germanium Gate-All-Around FETs

Jun 16, 2017

At the 2017 Symposia on VLSI Technology and Circuits in Kyoto, Japan (5-8 June), nanoelectronics and photovoltaics research centre Imec of Leuven, Belgium unveiled new process improvements for next-generation devices. For the first time it ...

Tags: Imec, transistors

Keysight and Virginia Diodes Chosen by Chalmers to Create First System for Network & Spectrum Analysis up to 1.5THz

Oct 12, 2016

Keysight Technologies Inc of Santa Rosa, CA, USA (which provides electronic measurement instruments, systems and related software used in the design, development, manufacture, installation, deployment and operation of electronic equipment) ...

Tags: Keysight, Virginia Diodes, Chalmers

Chinese LED Maker HC SemiTek Orders Veeco MOCVD Systems for High-Volume Production

Sep 20, 2016

Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that solid-state lighting manufacturer HC SemiTek Corp of Wuhan, China (which supplies full-spectrum visible light LED chips) has ordered ...

Tags: Veeco, MOCVD system, HC SemiTek

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Sep 9, 2016

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

Researchers Find New Nanastructure Design to Improve LEDs and Solar Cell Efficiency

Dec 15, 2015

Light and electricity dance a complicated tango in devices like LEDs, solar cells and sensors. A new anti-reflection coating developed by engineers at the University of Illinois at Urbana Champaign, in collaboration with researchers at the ...

Tags: anti-reflection coating, electronic device, semiconductor

Hole Injection From V-Pits Into Indium Gallium Nitride Quantum Wells

Nov 18, 2015

Researchers at Nanchang University in China have been studying the effect of V-pits in indium gallium nitride (InGaN) light-emitting diodes (LEDs) on electroluminescence [Xiaoming Wu, Junlin Liu, and Fengyi Jiang, J. Appl. Phys., vol118, ...

Tags: InGaN quantum wells, InGaN LEDs, InGaN

HexaTech Accquires Energy Funding from DOE

Nov 13, 2015

HexaTech Inc. announced today that it has received a continuation of funding under the U.S. Department of Energy's Advanced Research Projects Agency (ARPA-E) development program. The cost-share extension is valued at $1.2 million over 1 ...

Tags: HexaTech, AlN, semiconductor

UV LEDs to Find New Markets in Disinfection, Purification

Nov 5, 2015

Now established in curing, UV LED technology is expected to find growth opportunities in disinfection, purification and other new applications by 2017, says a market analyst. Under its new technology and market report entitled UV LED ...

Tags: UV LEDs, New Markets, Disinfection, Purification

SiC, GaN and Other Wider-Bandgap Materials Present New Choices for Power Electronics

Oct 19, 2015

When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...

Tags: Power Electronics, semiconductor, LED

k-Space Introduces KSA Scanning Pyro Tool for MOCVD Epiwafer Production

Sep 17, 2015

k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has introduced its kSA Scanning Pyro in-situ tool, which is designed to measure temperature ...

Tags: k-Space Associates, MOCVD, Scanning Pyro

Plasma Pre-Treatment for Gallium Nitride Chemical Mechanical Polishing

Sep 1, 2015

Osaka University in Japan has developed a plasma pre-treatment for chemical mechanical polishing (CMP) on gallium nitride (GaN) that avoids creating enlarged etch pits [Hui Deng et al, Appl. Phys. Lett., vol107, p051602, 2015]. Surface ...

Tags: Gallium Nitride, Mechanical Polishing

Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon

Jul 27, 2015

Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...

Tags: electronics, semiconductor

OEM Says That a Leading LED Maker Has Placed a Repeat Order for an Agheatpulse RTP System

Jul 13, 2015

OEM Group of Phoenix, AZ, USA (which supplies new and re-manufactured semiconductor capital equipment and upgrades focused on emerging markets) says that a leading LED maker has placed a repeat order for an AGHeatpulse RTP (rapid thermal ...

Tags: OEM Group, LED light, LED lamp, LED panel, RTP

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