n GaN

Monolithic Band-Engineered Semi-Polar White Light-Emitting Diode

University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...

Tags: LED, UCSB

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate

Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...

Tags: GaN devices, Silicon Substrate

Vertical Gallium Nitride Schottky Diode Combining High Current/Breakdown

HRL Laboratories LLC in the USA has developed a gallium nitride (GaN) vertical tunneling Schottky barrier diode (TBS) that gives good combined on and off performance, compared with vertical Schottky barrier diodes (SBDs) [Y. Cao et al, ...

Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates

Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...

Tags: High-Efficiency Blue LEDs

Indium Gallium Nitride Barriers Enhance LED Power And Efficiency

South China University of Technology has shown improved power and efficiency performance for indium gallium nitride (InGaN) light-emitting diodes (LEDs) with 1.2% indium-content multiple-quantum-well (MQW) barriers [Zhiting Lin et al, J. ...

Tags: LEDs, MQW, barriers, InGaN, MOCVD

Hybrid Growth of Gallium Nitride Tunnel Junctions

University of California Santa Barbara (UCSB) in the USA has been developing a hybrid technique to create III-nitride tunnel junctions (TJs) using a combination of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy ...

Tags: Gallium Nitride Tunnel, Hybrid

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

Reducing Current Leakage in Aluminium Gallium Nitride Transistors on Silicon

Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...

Tags: AlGaN, transistors, Silicon

Tunnel Junction for Vertical-Cavity Surface-Emitting Laser

University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...

Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE

McGill University Develops Light-Emitting Diodes Based on AlInGaN Nanowires on Silicon

McGill University in Canada has developed light-emitting diodes based on aluminium indium gallium nitride (AlInGaN) nanowires on silicon with spontaneous core-shell structures that inhibit non-radiative surface recombination, improving ...

Tags: electronics, LEDs AlInGaN PAMBE, semiconductor

Researchers in USA Develops Vertical Schottky and Pn GaN Diodes on Silicon

Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...

Tags: electronics, semiconductor

Toyoda Gosei Developed Vertical GaN SBDs Capable

Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...

Tags: Vertical Schottky barrier, power supply, diodes Free standing