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Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

Hybrid III-Nitride and Silicon Carbide High-Voltage Power Transistors

Jun 21, 2016

Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...

Tags: SiC, MOSFET, AlGaN

GaN and SiC Power Semiconductor Market to Surpass $1bn in 2020 Then $3.7bn in 2025

Mar 13, 2016

Energized by demand from hybrid and electric vehicles, power supplies and photovoltaic (PV) inverters, the emerging global market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors will rise from just $210m in 2015 to ...

Tags: Semiconductor Market, GaN, SiC

UK's EPSRC Centre for Power Electronics and GaN Systems Launch Future Power Challenge

Feb 14, 2016

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, together with the Centre for Power Electronics of the UK's ...

Tags: GaN Systems, power electronics

GaN Systems Announces 10x Production Increase at TSMC

Dec 2, 2015

GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...

Tags: GaN Systems, E-mode GaN FETs, TSMC

Suppressing Current Collapse in Normally-off Gallium Nitride Transistor

Nov 12, 2015

Japan's Panasonic Corp has reported the suppression of current collapse up to 800V for a normally-off gallium nitride (GaN) transistor by embedding a hybrid drain in a gate-injection transistor (HD-GIT) structure [Kenichiro Tanaka et al, ...

Tags: Panasonic, GaN transistor, AlGaN

Infineon Introduces GaN Devices for Mobile Base Station Transmitters

Nov 5, 2015

Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...

Tags: Infineon, GaN devices, mobile station transmitters

Forward-Bias Gate Breakdown in HEMTs with Enhancement-Mode P-Gan Gate

Sep 14, 2015

Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...

Tags: P-Gan Gate, Electronics

Cambridge Electronics Launches GaN Transistors and Power Electronic Circuits

Aug 10, 2015

Cambridge Electronics Inc (CEI) – which was spun off from Massachusetts Institute of Technology (MIT) in 2012 – has announced a range of gallium nitride (GaN) transistors and power electronic circuits targeted at cutting energy ...

Tags: GaN Transistors, Power Electronic Circuits

Silicon Carbide Chip Business Was Worth More Than $133m

Aug 4, 2015

According to the report 'GaN and SiC for power electronics applications' from Yole Développement, in 2014 the silicon carbide (SiC) chip business was worth more than $133m, with power factor correction (PFC) and photovoltaics (PV) ...

Tags: SiC Market, power electronics

Researchers in China and Hong Kong Have Claimed The Highest Output Power Density

Jul 13, 2015

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...

Tags: GaN MIS-HEMTs, PECVD ALD MOCVD

Panasonic Launched The Industry's Smallest E-Mode Gan Power Transistor

May 19, 2015

Panasonic Corp of Osaka, Japan is launching what it claims is the industry's smallest enhancement-mode (E-mode) gallium nitride (GaN) power transistor, encapsulating into an 8x8 dual-flat no-lead (DFN) 'X-GaN' surface-mount package. A ...

Tags: Panasonic, GaN Power Transistor

Infineon Announced The Expansion of Its GaN on Silicon Technology and Product Portfolio

Mar 24, 2015

At the 30th IEEE Applied Power Electronics Conference & Exposition (APEC 2015) in Charlotte, NC, USA (15-19 March), Infineon Technologies AG of Munich, Germany has announced the expansion of its gallium nitride (GaN)-on-silicon technology ...

Tags: Evatec Sputtering, PVD, Electronics

EPC Launched The EPC2027 to Achieve Higher Efficiency and Power Density

Jan 15, 2015

Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2027, a 450V normally ...

Tags: medical diagnostic equipment, solar power inverters, Electrical

Dulles Announce Availability of a Gate Driver Evaluation Board

Nov 24, 2014

Silicon carbide (SiC) power semiconductor supplier GeneSiC Semiconductor Inc of Dulles, VA, USA has announced availability of a gate driver evaluation board and has expanded its design support for its SiC junction transistor (SJT, claimed ...

Tags: SiC Junction Transistors, Driver Evaluation Board, Electrical

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