In stand I-2 (hall 2) at GSMA’s Mobile World Congress (MWC2018) in Barcelona, Spain (26 February – 1 March), Skyworks Solutions Inc of Woburn, MA, USA (which makes analog and mixed-signal semiconductors) has launched its first ...
Tags: Skyworks, Wireless Communications
The global market for radio-frequency (RF) power semiconductor devices – spanning silicon (LDMOS), gallium arsenide (GaAs) and gallium nitride (GaN) – will increase at a compound annual growth rate (CAGR) of nearly 12% during ...
Tags: Semiconductor
Source Photonics Inc of West Hills, CA, USA (which provides broadband access optical components and modules) and the Jintan Economic Development Zone have announced the establishment of a new optical laser production plant in Jintan, China. ...
Tags: MOCVD, Source Photonics
Wolfspeed of Raleigh, NC, USA — a Cree Company that makes silicon carbide (SiC) power products and GaN-on-SiC high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) — has extended its ...
Tags: Wolfspeed, silicon carbide
III-V optoelectronic foundry Compound Semiconductor Technologies Global Ltd (CST Global) of Hamilton International Technology Park, Blantyre, near Glasgow, Scotland, UK says that, at the III International Conference on Applications in ...
Carbonics Inc of Marina Del Rey, CA, USA has launched its ZEBRA carbon-on-silicon technology for radio frequency (RF) components and devices in wireless, communications, defense and aerospace markets. Carbonics was spun out from ...
Reneas Electronics has developed a system that offers 360-degree vehicle-to-vehicle and vehicle-to-infrastructure communications and is expected to identify applications related to autonomous driving. The company announced the global ...
Tags: Reneas Electronics, V2X solutions
The Taiwan government, in line with energy saving and reduction in carbon emission policies, aims to install 200,000 low-voltage (110V) smart power meters in 2017, one million units in 2020 and three million units in 2024, according to the ...
Tags: power meters, meters
The Center for Lighting Enabled Systems and Applications (LESA), an Engineering Research Center (ERC) funded by the US National Science Foundation (NSF) headquartered at Rensselaer Polytechnic Institute (RPI) in Troy, NY, recently achieved ...
For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
Chinese manufacturers technology have advanced in the past year to result in large GaN price fluctuations, and have entered III-V EPI-wafer synthesizing industry to build a comprehensive IoT and telecommunication supply chain in the ...
Tags: GaN Technology, LED manufacturer
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination
The pan-European REFERENCE research project - created to leverage disruptive radio-frequency silicon-on-insulator (RF-SOI) technology in developing industrial solutions for the performance, cost and integration needs of RF front-end modules ...
Tags: RF-SOI, ECSEL, 4G+communications
The global gallium arsenide (GaAs) device market will rise at a compound annual growth rate (CAGR) of 4.14% over 2016-2020, forecasts a report by TechNavio (issued by the firm Research and Markets). The GaAs device market largely ...
Tags: GaAs, M/A-COM Technology