Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has launched gallium nitride (GaN)-based high-electron-mobility transistor (HEMT) epitaxial wafers on 150mm-diameter semi-insulating silicon carbide (SiC) substrates ...
API Technologies Corp of Orlando, Florida, USA, a provider of RF/microwave, microelectronics, and security solutions, has expanded its power amplifier (PA) range to include the latest in GaN technology driven designs. This expanded line is ...
Tags: GaN Technology, API
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Panasonic Corp of Osaka, Japan has developed a GaN-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The firm claims that its design will for ...
Tags: Panasonic, GaN Power Transistor
Panasonic Corp of Osaka, Japan has announced the development of a gallium nitride (GaN)-based power transistor with a blocking voltage of 600V that enables stable switching operations. Shipment of evaluation samples began in March. The ...
Tags: switching operations, GaN, power transistor
Nitronex LLC of Durham, NC, USA, which designs and makes gallium nitride (GaN)-based RF power transistors for the defense, communications, broadband, and industrial & scientific markets, has named David W. Runton as its new VP of ...
The UK’s University of Cambridge has opened a new £1m facility for growing gallium nitride that aims to enable researchers to expand and accelerate their work, which promises to further reduce the cost and improve the efficiency ...
Tags: LED lights, LED, lights
Arkansas Power Electronics International Inc (APEI) of Fayetteville, AR, USA, a developer of technology for power electronics systems, electronic motor drives and power electronics packaging, and GaN Systems Inc of Ottawa, Ontario, Canada, ...
Tags: APEI, GaN Systems, Electronics
APEI and GaN Systems have developed a 1MHz gallium nitride power dc-dc boost converter delivering 5kW at 98.5% efficiency. GaN power transistors are lightning fast, have low on-resistance, and are been proposed for converters working ...
Tags: Consumer Electronics, Electronics
Singapore will allow US officials to inspect the work of a research institute linked to a Chinese telecoms firm which Washington suspects of espionage, the foreign ministry said on Thursday. K. Shanmugam, the foreign minister, told ...
Tags: Singapore, Huawei, telecoms firm
The global gallium nitride (GaN) semiconductor device market will grow at a compound annual growth rate (CAGR) of 18% over 2012-2016, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). ...
Tags: GaN Device, Lighting Market, Lighting
Scientists at the Fraunhofer Institute for Solar Energy Systems ISE in Freiburg, Germany have successfully tested power transistors made of gallium nitride (GaN) in power electronic systems. By using such transistors the researchers says ...
Tags: Fraunhofer, ISE, GaN, power transistor