University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...
Veeco Instruments Inc. (Nasdaq: VECO) announced that the University of Waterloo, located at the heart of Canada’s technology hub, has purchased a GEN10® Molecular Beam Epitaxy system for its recently opened Quantum-Nano Centre ...
Tags: Veeco Instruments, University of Waterloo, Quantum-Nano Centre
For full-year 2012, Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has reported revenue was €27.4m, down 5% on 2011’s €29m but up on ...
Canada’s University of Waterloo has ordered a GEN10 molecular beam epitaxy (MBE) system from Veeco Instruments Inc of Plainview, NY, USA for its recently opened Quantum-Nano Centre (QNC) hosting the Waterloo Institute for ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA Inc says that the Korean Photonics Technology Institute (KOPTI) has purchased a GEN20 molecular beam epitaxy (MBE) system. The system will be ...
Tags: process equipment, Veeco Instruments Inc, molecular beam epitaxy
In a statement issued to the London Stock Exchange (LSE), epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has a potential “significant acquisition”. This follows UK newspaper The Times reporting that, to ...
Tags: IQE, LSE, significant acquisition, UK
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN
Sophia University in Tokyo, Japan, has used nanocolumns of nitride semiconductor to produce different emission color LEDs in a single growth process for what is claimed to be the first time [Katsumi Kishino et al, Appl. Phys. Express, vol6, ...
Tags: Sophia University, LEDs, Sapphire substrates, LEd lighting
Seoul National University and Ritsumeikan University in Korea have developed a new technique for growing higher-quality gallium nitride (GaN) layers at temperatures as low as 500°C [In-Su Shin et al, Appl. Phys. Express, vol5, p125503, ...
Tags: Lights, Instruments, Meters
Researchers at Massachusetts Institute of Technology (MIT) have presented the shortest-gate working transistors yet built using III-V channels [J. Lin et al, IEDM, session 32.1]. The metal-oxide-semiconductor field-effect transistors ...
Tags: transistors, MIT, metal oxide semiconductor
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has sold an MBE 412 system to a “leading expert company in IR imaging sensors materials for ...
Riber S.A. of Bezons, France, which manufactures molecular beam epitaxy (MBE) systems as well as evaporation sources and effusion cells, has sold two Compact 21 MBE systems to Vienna University of Technology for its material research ...
Purdue and Harvard universities have produced stacked nanowire (NW) transistors with increased drive current and maximum transconductance. The results were presented on Wednesday 12 December at the International Electron Devices Meeting ...
Tags: Christmas Tree, 4d Electronics, nanowire transistors, wrap-around gates
Hong Kong University of Science and Technology (HKUST) has grown high-performance indium gallium arsenide (InGaAs) metal–oxide–semiconductor high-electron-mobility transistors (MOSHEMTs) directly on silicon [Xiuju Zhou et al, ...
For second-quarter 2012, epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has reported revenue of $136.5m, down 2% on $139.9m last quarter and 48% on $264.8m a year ago. Fiscal ...
Tags: Veeco, MOCVD, revenue and earnings