After two tough years of stagnation, in 2014 the power semiconductor device market returned to growth, rising by 8.4% to $11.5bn, according to the report 'Status of the Power Electronics Industry (February 2015 edition)' from Yole ...
GrapheneGraphene is an allotrope of carbon, whose structure is one-atom-thick planar sheets of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice. is considered by many as the successor to silicon because its ...
The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing and design, today announced that the global semiconductor industry posted record sales totaling $335.8 billion in 2014, an increase of ...
In booth 616 at the SPIE Photonics West 2015 event in San Francisco's Moscone Center (7-12 February), Marktech Optoelectronics of Latham, NY, USA, whose capabilities span wafer growth through finished packaging and custom solutions, is to ...
Tags: photodetectors, Electrical
Using a Camry hybrid prototype and a fuel cell bus, Tokyo-based Toyota Motor Corporation aims this year to conduct tests on the streets of Japan that will evaluate the performance of silicon carbide (SiC) power semiconductors, which could ...
GaN Systems Inc of Ottawa, Ontario, Canada has signed an agreement for Ecomal Europe to promote and distribute its gallium nitride (GaN)-based high-power switching transistors. GaN Systems' gallium nitride power transistors are based on ...
Tags: GaN Systems, high-power switching transistors, Electrical
It's said that Samsung will be responsible for about 75 percent of the chip production for the next iPhone. Samsung will make the chips from its factory in Austin, Texas, according to the report. But it did not say how much the contract is ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has introduced the 60V EPC2102 and the 80V ...
Tags: power conversion system, chip-scale package, Electrical
Researchers at Japan's NTT Device Technology Laboratories have used silicon (Si) doping to achieve p-type conduction in gallium arsenide antimony (GaAsSb) produced with metal-organic chemical vapor deposition (MOCVD) on indium phosphide ...
k-Space Associates Inc of Dexter, MI, USA (which supplies instrumentation and software for surface science and thin-film technology applications) and the Colleges of Nanoscale Science and Engineering (CNSE) at SUNY Polytechnic Institute ...
Tags: III-nitride materials research, growth parameters, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2027, a 450V normally ...
Tags: medical diagnostic equipment, solar power inverters, Electrical
Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) power devices, has introduced a new MOSFET design kit that includes all of the components needed to evaluate Cree MOSFET and Schottky diode performance in a configurable ...
Tags: configurable half-bridge circuit, MOSFET design, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that its EPC2100 family of eGaN ...
Tags: Electronic Products, Electrical
The Center for Nanoscale Science, a US National Science Foundation-funded Materials Research Science and Engineering Center (MRSEC) at Penn State University, has been awarded a six-year, $15m grant to continue research on materials at the ...
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical