Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are best positioned to address emerging power electronics performance needs in electric vehicles (EVs), with SiC displacing silicon as early ...
Tags: Power electronics GaN SiC, Electric Vehicle, Electrical, Electronics
Law360, New York July 22, 2014, 7:26 PM ET — Panasonic Corp. and a slew of other companies were hit with yet another class action in California federal court on Tuesday accusing them of conspiring to fix prices on a key component of ...
Tags: Panasonic, Samsung, Electrical, Electronics
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for analog, RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM GaN RF power transistors, transistors, Electrical, Electronics
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
The silicon carbide (SiC) semiconductor market will increase at a compound annual growth rate (CAGR) of 42% from 2014 to $3182.89m in 2020, according to a new report from MarketsandMarkets (‘Silicon carbide (SiC) in semiconductor ...
Tags: SiC Semiconductor, Semiconductor
Under the leadership of the European Defence Agency (EDA), the multi-national R&D project MANGA (Manufacturable GaN-SiC-substrates and GaN epitaxial wafers supply chain) says that it has succeeded in implementing a supply chain for the ...
Tags: GaN Technologies, HEMT structures, electronics components
Directed by Infineon Technologies AG together with partners Aixtron, SiCrystal AG and SMA Solar Technology AG, the three-year German project NeuLand (begun in late 2010) has developed highly integrated components and electronic circuits ...
Based on a scenario where electric vehicles and hybrid electric vehicles (EV/HEV) begin adopting gallium nitride (GaN) in 2018-2019, the ramp-up of the GaN power device market will be quite impressive starting in 2016, at an estimated ...
Tags: Yole GaN HEMT Power electronics, Electrical, Electronics
Researchers at the University of Arkansas have designed integrated circuits that can survive at temperatures greater than 350°C (about 660°F). Funded by the US National Science Foundation (NSF), their work could improve the ...
Tags: SiC Power electronics HEV, Electrical, Electronics, circuits
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that Dr John Glaser has joined its ...
Tags: EPC E-mode GaN FETs, Electrical, Electronics
An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor
Due to new components, power electronic converters for power engineering applications are becoming even more efficient. In particular, silicon carbide (SiC) devices enable the construction of extremely efficient and compact power electronic ...
Tags: SiC Devices, DC-DC Converter
Toshiba Corp’s Semiconductor & Storage Products Company has expanded its family of 650V silicon carbide (SiC) Schottky barrier diodes (SBDs) with the addition of insulated TO-220F-2L packaged products. Mass production shipment has ...
Tags: Toshiba, Semiconductor, Storage Products
China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...