Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
The two-episode English version of a documentary about Confucius made its debut during Chinese President Xi Jinping's visit to the UK. [Photo/China.com.cn] A documentary film on Confucius, made jointly by Chinese and British companies, ...
Tags: documentary film, Confucius
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
AlGaN/GaN and InAlN/GaN structures combine high electron mobility and high critical electric field strength and are excellent platforms for the production of next-generation RF and power electronics devices such as high-electron-mobility ...
Tags: LayTec, Metrology MOCVD, AlGaN/GaN HEMTs
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has launched a line of full-visible-spectrum LED 230V large lamps. From narrow spot to ...
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that, to support its accelerating ...
Tags: EPC, GaN, semiconductors
Electronic hardware and software design solutions provider Mentor Graphics Corp of Wilsonville, OR, USA says that Xiamen San'an Integrated Circuit Co Ltd (San'an IC) of Xiamen Torch High-tech Industrial Development Zone, China has selected ...
Tags: San'an, Mentor Graphics, GaAs
Soraa, the world leader in GaN on GaN™ LED technology, launched a full line of high performance, full visible spectrum LED 230V large lamps. From narrow spot to flood, Soraa’s PAR20, PAR30 short/long neck, PAR38, and AR111 LED ...
Tags: Soraa, LED lamps, LED luminaire
Plextek RF Integration of Great Chesterford, near Cambridge, UK, which designs and develops RFICs, MMICs and microwave/millimeter-wave modules, says that on 3 December at 18:00GMT (10:00PT/13:00ET/19:00CET) its CEO Liam Devlin is presenting ...
Tags: Plextek, GaN Transistors, GaN transistor
Researchers based in USA have been studying performance improvements in aluminium gallium nitride (AlGaN) ultraviolet (UV) avalanche photodiodes (APDs) gained from using free-standing gallium nitride substrates instead of gallium nitride on ...
Tags: AlGaN, Ultraviolet photodetectors, HVPE
At an annual awards ceremony in London attended by more than 350 guests from the UK electronic systems industry, UK-based Plessey has been named Company of the Year by the NMI (National Microelectronics Institute), the industry trade body ...
Researchers in the USA have reduced current leakage for aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) on silicon to the level achieved for devices produced on much more expensive silicon carbide [Bo Song et ...
Tags: AlGaN, transistors, Silicon
Teledyne Microwave Solutions Inc of Mountain View, CA, USA (TMS, a business unit of Teledyne Technologies Inc) has launched a line of gallium nitride (GaN)-based wideband amplifiers that is claimed to further lower the form factor threshold ...
Tags: TMS, GaN amplifiers