University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...
Tags: Electrical, Electronics, Mosfets
Structured Materials Industries Inc (SMI) of Piscataway, NJ, USA, which provides chemical vapor deposition (CVD) systems, components, materials, and process development services, says that its temperature profiling flange is a versatile ...
Tags: SMI, CVD, MOCVD, Vertical Reactors
Researchers at Samsung Electronics and Seoul National University (SNU) in Korea have produced high-quality free-standing gallium nitride (GaN) substrates from hydride vapor phase epitaxy (HVPE) on silicon [Moonsang Lee et al, Appl. Phys. ...
Tags: GaN-on-silicon substrates GaN HVPE, Electrical, Electronics
Emcore Corp of Albuquerque, NM, USA, which makes compound semiconductor-based components and subsystems for the fiber-optic and solar power markets, says that Dr Thomas Russell has decided to not stand for re-election to the board at the ...
Tags: Emcore, electronics
Researchers in Taiwan have used cadmium selenide (CdSe) quantum dots (QDs) to increase the power conversion efficiency of three-junction solar cells by around 10% [Ya-Ju Lee et al, Optics Express, Vol. 21, pA953, 2013]. The team was ...
Tags: CdSe CdSe quantum, Three-junction solar cells p-Ge substrates MOCVD
Currently 80 percent of sapphire applications are used in sapphire substrate while the other 20 percent is for non-substrate materials, according to Chinese-language online media Finance.com.cn estimations. Sapphire that is used in ...
University of California Santa Barbara (UCSB) has been using limited area epitaxy (LAE) to improve the performance of lasers diodes (LDs) grown on free-standing semipolar (20-21) gallium nitride (GaN) substrates [Matthew T. Hardy et al, J. ...
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that China-based concentrated photovoltaic (CPV) solar cell maker Guangdong Redsolar Photovoltaic Tech Co Ltd has purchased multiple TurboDisc ...
Tags: Redsolar, MOCVD Systems
Deposition equipment maker Aixtron SE of Aachen, Germany says that, at its MOCVD Seminar at the 10th China International Forum on Solid State Lighting (China SSL 2013) in Beijing (10-12 November) - organized by the China Solid State ...
Tags: Aixtron MOCVD, China SSL 2013
University of California Santa Barbara (UCSB) has developed semipolar (20-2-1) nitride semiconductor laser diodes (LDs) without using aluminium gallium nitride (AlGaN) as the cladding material for optical confinement [A. Pourhashemi et al, ...
RWTH Aachen University has reported the first small-signal response frequency characteristics for p-channel gallium nitride (GaN) heterostructure field-effect transistors (HFETs) [Herwig Hahn et al, Jpn. J. Appl. Phys., vol52, p128001, ...
Tags: GaN HFETs GaN MOCVD, Electrical, Electronics
U.S. manufacturer Veeco and German company Aixtron that have long possessed China’s LED epitaxal wafer MOCVD market, will be facing “war declarations” issued by Chinese manufacturers, according to a report by Chinese ...
Tags: MOCVD Equipment, Lighting
Australian Cleantech company BluGlass Limited has today announced that it has increased its operational capacity with the successful commissioning of a former production MOCVD system at the Company’s Silverwater facility. Using a low ...
Tags: Bluegalss, MOCVD System
Veeco Instruments Inc. announced that the Guangdong Redsolar Photovoltaic Tech Co., Ltd (Redsolar), a leading producer of concentrated photovoltaic (CPV) solar cells in China, has purchased multiple TurboDisc® K475™ As/P MOCVD ...
Tags: Solar Cell, MOCVD Systems