Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Researchers in France have developed a technique to directly grow graphene on aluminium nitride (AlN) crystalline templates on silicon substrates [A. Michon et al, Appl. Phys. Lett., vol104, p071912, 2014]. Up to now, attempts to use ...
Tags: Electrical, Electronics
University of California Santa Barbara (UCSB) and epiwafer foundry IQE Inc have developed 1.3μm-wavelength indium arsenide (InAs) quantum dot (QD) lasers grown on silicon (Si) with “record performance” [Alan Y. Liu et al, ...
Tags: Silicon, `Quantum Dot Lasers
University of Notre Dame (UND) is developing gallium nitride (GaN) quantum dots in aluminium nitride (AlN) as a route to deep ultraviolet (UV) light-emitting diodes (LEDs) [Jai Verma et al, Appl. Phys. Lett., v104, p021105, 2014]. ...
Tags: UV Light Emission, LEDs
Oxford Instruments is offering an upgrade option for its ALD equipment to apply a bias voltage to the substrate, adding further control of the energy at the wafer surface in order to tune the properties of the deposited film. While scaling ...
SP Scientific, a leading provider of well-established and highly regarded scientific equipment brands, and AAIPharma Services Corp. ("AAIPharma"), a leading provider of pharmaceutical analytical testing, product development and ...
Tags: SP Scientific, AAIPharma, purchase agreement
Beauty may be in the eye of the beholder, but anyone browsing this collection of glass crystallisation images beheld by Edgar Zanotto’s eye is unlikely to disagree with his assessment of beauty. In this book, Zanotto celebrates 36 ...
Tags: glass, decoration
One of the biggest challenges facing rechargeable batteries with lithium (Li) electrodes is the growth of dendrites, which can short-circuit the batteries and cause complete failure. Although dendrites do their damage in the battery's ...
Tags: Electronics, Batteries
China’s Xidian University has produced ‘normally-off’ gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with a thin high-aluminium-content aluminium gallium nitride (AlGaN) barrier layer [Kai Zhang et al, ...
Tags: Xidian University, normally-off, GaN, HEMTs
LayTec AG of Berlin, Germany, which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications, says that researchers at Germany's Ulm University have used LayTec's EpiCurve TT ...
Tags: LayTec HVPE GaN, Electrical, Electronics
Chinese Academy of Sciences' Semiconductor Lighting R&D Center at the Institute of Semiconductors in Beijing has developed an electrically driven color-tunable light-emitting diode (LED) based on indium gallium nitride (InGaN) quantum wells ...
Tags: LED, Electrical, Electronics, Semiconductor