KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has announced metal-organic chemical vapour deposition (MOCVD) demonstration ...
Tags: metal-organic chemical, GaN-550 MOCVD system, Electrical
UK-based plasma etch and deposition processing system maker Oxford Instruments Plasma Technology (OIPT) recently won an order from The City University of New York (CUNY) for its PlasmaPro etch and deposition systems. The PlasmaPro 100 ICP ...
In Kolkata and Delhi, Oxford Instruments is hosting its third series of annual seminars for the nanotechnology industry in India. ‘Bringing the Nanoworld Together 2014’ will showcase nanotechnology tools and their use in ...
Tags: Oxford Instruments, Seminars, Electronics
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
For second-quarter 2014, deposition equipment maker Aixtron SE of Aachen, Germany has reported revenue of €46.2m, rebounding by 5% from €43.9m last quarter (which had been down 14% on the previous quarter) and up 2% on €45.3m ...
Tags: Aixtron, MOCVD, Electronics
UK-based etch and deposition equipment maker Oxford Instruments says that an additional PlasmaPro 100 plasma etch system has recently been ordered by the Center for Micro and Nanoscale Research and Fabrication at the University of Science ...
Tags: OIPT Etch, Electrical, Electronics
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors
China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has relocated its US East Coast regional office. Due to a rise in customers in ...
Tags: SAMCO, chemical vapour deposition
Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
Driven by the fanfare over (and over-estimation of) the LCD display market, the LED front-end equipment market experienced an unprecedented investment cycle in 2010-2011, driven mostly by metal-organic chemical vapor deposition (MOCVD) ...
Tags: LED, Electrical, Electronics
The market surge was driven mostly by MOCVD reactor shipments to new Chinese entrants, who benefited from the generous subsidies of the Chinese central and local governments in a bid to stimulate domestic chip production. Financial ...