Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
Uncertainty hangs over the market for power devices made with the wide-bandgap semiconductor silicon carbide (SiC), due to a lack of clarity over whether and when electric vehicles will adopt them, according to the latest study on the SiC ...
Tags: Electric Vehicle, Electronics, Power Devices
M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes analog semiconductors, components and subassemblies for RF, microwave and millimeter-wave applications) has launched a gallium nitride on silicon carbide (GaN-on-SiC) ...
Tags: M/A-COM Tech, Power Transistor, Electrical
Traditionally Gallium Nitride (GaN) LED devices are produced on either sapphire or silicon carbide (SiC) substrates, due to the good crystal lattice matching between the materials and the GaN, with typically 2” or 4” diameter ...
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
The emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a factor of 18 during the next 10 years, energized by demand from power supplies, photovoltaic (PV) inverters and industrial ...
Energized by demand from power supplies, photovoltaic (PV) inverters and industrial motor drives, the emerging market for silicon carbide (SiC) and gallium nitride (GaN) power semiconductors is forecast to grow a remarkable factor of 18 ...
Soraa has announced its new perfect spectrum SORAA VIVID 2 and PREMIUM 2 LED MR16 lamp lines—the first ultra-efficient replacements for 65-watt and 75-watt halogen lamps, available for both 12V and line voltages. A technological ...
Delta Energy Systems, a subsidiary of Delta Electronics Group (one of the world's largest providers of power management solutions), has launched a new generation of solar photovoltaic (PV) power inverters that use silicon carbide (SiC) ...
Tags: Electronics Group, Electrical
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on 'GaN on GaN' (gallium nitride on gallium nitride) substrates, has launched its full-spectrum VIVID 2 and PREMIUM 2 LED MR16 lamp lines – claimed to ...
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Soraa Inc will ramp up orders with its contract manufacturers in Malaysia for its LED modules used in directional light LED lamps, riding on an approximate US$4bil (RM12.16bil) global market size for such illumination products in the ...
Tags: LED modules, LED, Lighting
In anticipation of growing demand for industrial and automotive applications, Japan’s Toshiba Corp has started volume production of silicon carbide (SiC) power devices at its Himeji Operations–Semiconductor plant in Hyogo ...
Tags: SiC Power Devices, Toshiba
Plessey announced that samples of its GaN on silicon LED products are available. These entry level products are the first LEDs manufactured on 6-inch GaN on silicon substrates to be commercially available anywhere in the world. Plessey is ...
Tags: Plessey, GaN on Silicon, Lighting
Toshiba has started volume production of silicon carbide (SiC) power devices at Himeji in the Hyogo Prefecture in anticipation of growing demand for industrial and automotive applications. Toshiba will manufacture Schottky Barrier Diodes ...
Tags: Toshiba, SIC, Electronics