Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
Specialty metal and chemical products firm 5N Plus Inc of Montreal, QuÉbec, Canada has appointed Bertrand Lessard as chief operating officer, effective 28 April. 5N Plus provides specialty purified metals such as bismuth, gallium, ...
Tags: 5N Plus, Electrical, Electronics
IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...
Epiwafer foundry and substrate maker IQE plc of Cardiff, Wales, UK has received its first $1m purchase order agreement for indium antimonide (InSb) substrates, which are used in mid-wavelength infrared (MWIR) imaging technology. IQE ...
Tags: IR detector, Electrical, Electronics
NeoPhotonics Corp of San Jose, CA, a vertically integrated designer and manufacturer of both indium phosphide (InP) and silica-on-silicon photonic integrated circuit (PIC)-based modules and subsystems for high-speed communications networks, ...
Tags: NeoPhotonics PICs, Electrical, Electronics
The US Department of Energy's National Energy Research Scientific Computing Center (NERSC) has conducted simulations showing that nanostructures half the width of a DNA strand could enhance the efficiency of LEDs. In particular, efficiency ...
Tags: InN Green LEDs, LED
Ascent Solar Technologies Inc of Thornton, CO, USA, which makes lightweight, flexible copper indium gallium diselenide (CIGS) thin-film photovoltaic modules that it integrates into its EnerPlex series of consumer products, has announced ...
Tags: Solar EnerPlex CIGS, Solar, Electrical, Electronics
ETH Zürich and Philips Technologie GmbH have developed 981nm-wavelength passively mode-locked electrically pumped vertical-external-cavity surface-emitting lasers (EP-VECSELs) with “the shortest pulses (2.5ps), highest average ...
Tags: EP-VECSELs InGaAs GaAs
In joint research with Japan's New Energy and Industrial Technology Development Organization (NEDO), Tokyo-based Solar Frontier - the largest manufacturer of CIS (copper indium selenium) thin-film photovoltaic (PV) solar modules - has ...
Tags: Solar Frontier CIS, Electrical, Electronics, PV Electronics
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
Infinera Corp of Sunnyvale, CA, USA, a vertically integrated manufacturer of digital optical network systems incorporating its own indium phosphide-based photonic integrated circuits (PICs), says that customers have deployed more than 1 ...
Tags: PICs, integrated circuits
Sun Yat-sen University in China has improved the wall-plug efficiency of indium gallium nitride (InGaN) light-emitting diodes (LEDs) grown on silicon by incorporating a distributed Bragg reflector (DBR) [Yibin Yang et al, Appl. Phys. ...
Tags: InGaN LEDs, Silicon, semiconductor
Researchers in France have reported on solar cell devices based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [Sirona Valdueza-Felip et al, Appl. Phys. Express, vol7, p032301, 2014]. Conversion efficiencies of up to 2% ...
Tags: Solar Cells, InGaN
Freescale Semiconductor of Austin, TX, USA, which provides RF power transistors for cellular markets, has launched what is claimed to be the first 2W integrated power amplifier (PA) operating with a 5V supply and delivering more than 40dB ...
Tags: Freescale InGaP HBT, Electrical, Electronics
Hong Kong University of Science and Technology (HKUST) is developing techniques to monolithically integrate high-electron-mobility transistors (HEMTs) and light-emitting diodes (LEDs) based on aluminium indium gallium nitride (AlInGaN) ...
Tags: Nitride Semiconductor, LEDs, LED regions