SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has announced metal-organic chemical vapour deposition (MOCVD) demonstration ...
Tags: metal-organic chemical, GaN-550 MOCVD system, Electrical
Since gallium nitride (GaN) materials can create much more efficient devices for electric power conversion in devices from cell phone chargers to hybrid electric vehicles, the market for GaN discrete components will grow to $1.1bn in 2024, ...
Infineon Technologies AG of Munich, Germany has completed its acquisition (announced on 20 August) of International Rectifier Corp (IR) of El Segundo, CA, USA, following the approval of all necessary regulatory authorities and International ...
Epiluvac AB of Lund, Sweden has received an order for its EPI-1000X silicon carbide (SiC) reactor from a “leading European research center”. Installation and commissioning of the system will be completed during first-quarter ...
Tags: gas flows, heating system, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, has launched the EPC2027, a 450V normally ...
Tags: medical diagnostic equipment, solar power inverters, Electrical
Cree Inc of Durham, NC, USA, which makes silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, recently extended its family of 50V discrete GaN high-electron-mobility transistor (HEMT) die with the release of three new ...
Tags: electron drift velocity, gallium arsenide technologies, Electrical
Researchers at the UK’s University College London (UCL), in collaboration with groups at the University of Bath and Daresbury Laboratory’s Scientific Computing Department in Warrington, UK, are said to have uncovered why blue ...
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that, in continuing with its reorganization (as part of its 5-Point Program to return to sustainable profitability, launched in May 2013), it plans to cut ...
Tags: organic light-emitting diodes, gallium nitride, Electrical
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) for power management applications, says that its EPC2100 family of eGaN ...
Tags: Electronic Products, Electrical
Researchers at Chinese Academy of Sciences’ Institute of Semiconductors have achieved a 42% enhancement in light output from flip-chip indium gallium nitride (InGaN) light-emitting diodes (LEDs) by incorporating a photonic crystal ...
Tags: photonic crystal(PHC)structure, light-emitting diodes, Electrical
Rensselaer Polytechnic Institute in the USA has developed nitride semiconductor solar cells with high quantum efficiency for short wavelengths (370-450nm) and concentrated photovoltaics at temperatures up to 400°C [Liang Zhao et al, ...
Tags: PV Performance, Electrical
Researchers in Germany have developed gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on silicon carbide (SiC) layers on silicon wafers [Wael Jatal et al, IEEE Electron Device Letters, published online 11 December 2014]. ...
Tags: Cubic Silicon Carbide, Electrical
RF Micro Devices Inc of Greensboro, NC, USA and fellow RF component maker TriQuint Semiconductor Inc of Hillsboro, OR, USA have completed their merger to form Qorvo Inc, a provider of what is claimed to be the industry’s broadest ...
Tags: gallium arsenide, gallium nitride, bulk acoustic wave, Electrical
China’s Xidian University has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, ...
Tags: HEMTs, InGaN channels
Following its Manufacturing Advanced Functional Materials (MAFuMa) call issued in February, the UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded £20m to 10 new research projects that aim to advance the ...
Tags: Functional Materials, Electronics