Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...
Tags: MOCVD, GaN devices
Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany received the CS High-Volume Manufacturing Award 2016 for its new fully automated AIX G5+ C metal-organic chemical vapor deposition (MOCVD) system at this year's CS ...
Tags: Aixtron, MOCVD, CS industry Awards, GaN-on-Si
The global metal-organic chemical vapor phase deposition (MOCVD) market for power electronics is will rise at a striking compound annual growth rate (CAGR) of over 40% to more than $205m in 2019, according to the report 'Global MOCVD Market ...
Tags: MOCVD, Power electronics
Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
The main challenge of growing gallium nitride (GaN)-based high-electron-mobility transistors (HEMTs) on silicon substrates is the lattice mismatch between GaN and AlGaN that causes a high tensile stress and often leads to cracks. Now, by ...
Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...
Tags: GaN-on-silicon LEDs, Plessey MOCVD
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, says that Taiwan Semiconductor Manufacturing Corporation (TMSC, the ...
Tags: GaN Systems, E-mode GaN FETs, TSMC
At an annual awards ceremony in London attended by more than 350 guests from the UK electronic systems industry, UK-based Plessey has been named Company of the Year by the NMI (National Microelectronics Institute), the industry trade body ...
Shenzhen Kaifa Technology (Kaifa) announced its LED subsidiary Kaistar will be acquiring 100% shares of a major U.S. LED company for US $130 million recently, reported China’s Securities Daily. Following the announcement, Kaistar ...
Tags: Kaistar, LED package, LED lighting
The LED industry is gradually maturing in 2015, with products cost/performance (C/P) ratio becoming increasingly important. Low and mid-power flip chip products are increasingly valued by the industry. To further understand this trend ...
Tags: LED industry, LED chip, Chip Scale Packaging
Plessey has collaborated with fellow UK-based firm 8Point3 Ltd (a provider of energy-saving, solid-state lighting solutions for both the private and public sectors, and a Value Add Partner of Philips Lighting) to develop and produce a ...
Toshiba Corporation’s Semiconductor & Storage Products Company today announced the addition of 4 new products to its line-up of the “TL1L4 series” of high power white LEDs, that achieve high luminous flux of 140lm(min.). ...
Tags: Toshiba, high power LED, LED lighting
In a dramatic change from the status quo, nearly half of all gallium nitride (GaN) LEDs will be produced on silicon substrates by the end of the decade. That’s according to a new report by analysts at IHS, who forecast that the ...
Tags: LED Production, GaN LEDs, sapphire wafers
When people think about wide-bandgap (WBG) semiconductor materials for power electronics applications, they usually think of gallium nitride (GaN) or silicon carbide (SiC) – which is not surprising, since SiC and GaN are currently the ...
Tags: Power Electronics, semiconductor, LED
Wolfspeed of Raleigh, NC, USA, a Cree Company that supplies gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), has introduced two plastic-packaged ...
Tags: Wolfspeed, high-electron-mobility transistors, GaN HEMT devices