Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
FaceCake Marketing Technologies, Inc. is previewing its revolutionary augmented retail Try-On technologies in Microsoft's booth (#1005) at the 102nd annual NRF Convention & Expo on January 14-15, 2013, at the Jacob K. Javits Convention ...
Tags: FaceCake, Try-On technologies, NRF Show
FaceCake Marketing Technologies, Inc. demonstrates its suite of augmented retail Try-On solutions at the ShowStoppers @ CES 2013 event on January 8, 2013, from 6:00 p.m. to 10:00 p.m. at the Wynn Hotel in Las Vegas, Nevada. FaceCake gives ...
Tags: FaceCake, Try On solutions, ShowStoppers, VDS
Singapore researchers have developed high-mobility III-V indium gallium arsenide (InGaAs) channel n-type metal-oxide-semiconductor field-effect transistors (n-MOSFET) on germanium-on-insulator (GeOI) substrates [Ivana et al, Appl. Phys. ...
Tags: n-MOSFETs, metal-oxide-semiconductor, semiconductor, transistors
Tokyo-based Mitsubishi Electric Corp has developed the MGFK47G3745 gallium nitride(GaN)high-electron-mobility transistor(HEMT)Ku-band(12–18GHz)amplifier for satellite earth stations. Picture:Simplified schematic of amplifier. ...
Tags: Electrical, Mitsubishi, Electric
Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...
Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors