Researchers in the USA have grown two-dimensional (2D) layers of gallium nitride (GaN) using a graphene encapsulation on silicon carbide (SiC) substrate [Zakaria Y. Al Balushi et al, Nature Materials, published online 29 August 2016]. The ...
Tags: 2D GaN, graphene encapsulation, SiC
In booth 156 at European Microwave Week (EuMW 2016) in London, UK (3–7 October), Wolfspeed of Research Triangle Park, NC, USA — a Cree Company that makes gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility ...
Tags: Wolfspeed, GaN-on-SiC, HEMTs, EuMW 2016
Institute of High Pressure Physics (IHPP) and TopGaN Ltd, both of Poland, have been jointly developing indium gallium nitride (InGaN) waveguide structures for use in blue laser diodes (LDs) [Grzegorz Muziol et al, Appl. Phys. Express, vol9, ...
At the IEEE Energy Conversion Congress and Exposition (ECCE2016) in Milwaukie, WI, USA (18-22 September), VisIC Technologies Ltd of Nes Ziona, Israel - a fabless developer of power conversion devices based on gallium nitride (GaN) ...
Tags: ECCE2016, VisIC Technologies, MISHEMTs
VisIC Technologies Ltd of Nes Ziona, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has launched a new ...
Tags: VisIC, MISHEMTs, new 650V GaN power switch
Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...
Tags: InGaN Laser diodes, cw, SINANO
As part of the Local Control of Materials Synthesis (LoCo) program of the US Defense Advanced Research Projects Agency (DARPA), the University of Colorado, Boulder (CU) have developed the new electron-enhanced atomic layer deposition ...
For decades, researchers have tried to harness the unique properties of carbon nanotubes (CNTs) to create high-performance electronics that are faster or consume less power — resulting in longer battery life, faster wireless ...
The global radio frequency (RF) IC market will increase at a compound annual growth rate (CAGR) of nearly 12% from 2016 to 2020, forecasts a report by Technavio. Asia-Pacific (APAC) is expected to be the main demand-generating region and ...
Tokyo-based Mitsubishi Electric Corp has developed a 220W-output gallium nitride high-electron-mobility transistor (GaN-HEMT) with what is claimed to be world-leading drain efficiency of 74% (in load-pull measurements) for 2.6GHz-band base ...
Tags: Mitsubishi Electric, GaN-HEMT
Researchers at Massachusetts Institute of Technology (MIT) in the USA have claimed record transconductance for III-V fin field-effect transistors (finFETs) when normalized according to fin width [Alon Vardi and Jesús A. del Alamo, ...
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power and RF devices, says that ...
University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...
Yale University and University of Illinois Urbana in the USA have improved the efficiency of gallium arsenide phosphide (GaAsP) solar cells on silicon (Si) by reducing threading dislocation densities (TDDs) [Kevin Nay Yaung et al, Appl. ...
Tags: GaAsP solar cells, GaAsP, MBE, MOCVD
EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers for 600V high-electron-mobility transistor (HEMT) power semiconductors, has been ...
Tags: EpiGaN, GaN-on-Si, nomination