UK-based etch, deposition and growth system maker Oxford Instruments says that Canada’s University of Alberta nanoFAB open-access fabrication and characterization facility has purchased three plasma etch systems to provide upgraded ...
Tags: network, Etch Systems, Electrical
NTT Basic Research Laboratories in Japan has used a hexagonal boron nitride (h-BN) layer to release and transfer gallium nitride (GaN) high-electron-mobility transistors (HEMTs) from sapphire substrate to thermally conducting copper, ...
Tags: Boron Nitride, GaN Transistors
Vanderbilt University in Tennessee, USA is expanding its research capabilities with the addition of a PlasmaPro 100 Cobra plasma etch system from UK-based etch, deposition and growth system maker Oxford Instruments, to be installed soon in ...
Tags: Oxford Instruments, Plasma Etch
North Carolina State University (NCSU) has been developing homo-epitaxy of non-polar aluminium nitride (AlN) with a view to deep ultraviolet (DUV, less than 300nm wavelength) optoelectronics [Isaac Bryan et al, J. Appl. Phys., vol116, ...
Tags: aluminium nitride, UV LED
At a ceremony on 23 October at Mercure Holland House Hotel in Cardiff (organized by UK-based business publisher Insider Media Ltd), plasma etch, deposition and thermal wafer processing equipment maker SPTS Technologies Ltd of Newport, ...
Tags: SPTS, Green Manufacturer Prize
Orbotech has completed the acquisition of SPTS Technologies Group which works in the areas of advanced packaging and micro-electro-mechanical systems (MEMS). The company said that the acquisition of SPTS would help them as the latter is a ...
In Kolkata and Delhi, Oxford Instruments is hosting its third series of annual seminars for the nanotechnology industry in India. ‘Bringing the Nanoworld Together 2014’ will showcase nanotechnology tools and their use in ...
Tags: Oxford Instruments, Seminars, Electronics
Meijo and Nagoya universities in Japan have developed a laser lift-off (LLO) technique for removing gallium nitride (GaN) substrates from ultraviolet (UV) light-emitting diodes (LEDs) to improve light extraction efficiency [Daisuke Iida et ...
Researchers in Singapore have reported high-frequency performance of gallium nitride (GaN) indium aluminium nitride (InAlN) high-electron-mobility transistors (HEMTs) on silicon substrates, including the first noise measurements [S. ...
Tags: Electrical, Electronics
MEI Wet Processing Systems and Services LLC (a subsidiary of MEI LLC) of Albany, OR, USA has revealed performance data on its new Cu & TiW Critical Etch System for compound semiconductor manufacturing. MEI says that its Critical Etch ...
Tags: Cu, spray tools, TiW etch
Researchers in Japan and USA have claimed the first experimental demonstration of higher breakdown voltage for slant field-plate (FP) gallium nitride (GaN) high-electron-mobility transistors (HEMTs) over convention field-plate designs ...
Tags: GaN, HEMTs, Electronics
University of California, Santa Barbara (UCSB) has used photo-electro-chemical etch (PEC) to create 405nm-wavelength vertical-cavity surface-emitting lasers (VCSELs) based on indium gallium nitride (InGaN) multiple quantum wells (MQWs) [C. ...
University of Liverpool researchers propose replacing a toxic treatment step in cadmium telluride (CdTe) solar cell production with one that is benign, but apparently just as effective [J. D. Major et al, Nature, published online 25 June ...
Researchers from Ohio State University (OSU) and University of California–Irvine (UCI) have developed a band engineering technique to improve the results from photo-electro-chemical (PEC) etch of nitride semiconductors [Prashanth ...
Wet-chemical equipment maker ClassOne Technology of Kalispell, MT, USA has launched its Solstice line of electroplating tools, designed specifically for the smaller-substrate users in emerging technologies such as MEMS, LEDs, power devices, ...