For third-quarter 2015, deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has reported revenue of €54.6m, up 35% on €40.4m last quarter and up 19.7% on €45.6m a year ago due to increased scheduled ...
Tags: Aixtron, lighting market
Emcore Corp of Alhambra, CA, USA, which provides indium phosphide (InP)-based optical chips, components, subsystems and systems for broadband and specialty fiber-optics markets, has expanded its range of laser diode and avalanche photodiode ...
Tags: optical chips, subsystems
University of California Santa Barbara (UCSB) has developed an n-type gallium nitride (n-GaN) tunnel junction (TJ) intracavity contact to reduce threshold current and increase differential efficiency in its m-plane III-nitride ...
Tags: VCSEL, n-GaN, GaN substrates, MOCVD, MBE
Capacity expansion by Chinese LED chip makers has resulted in a supply glut, with this year's LED chip supply-demand ratio reaching 22%, according to the latest '2015 Global LED Industry Supply and Demand Database Report' by LEDinside (a ...
Tags: LED Chip, MOCVD Capacity
Taiwan's National Tsing Hua University has been studying ways to improve the performance of p-type gallium nitride (p-GaN) in terms of hole density and contact resistance with nickel/gold [Bo-Sheng Zheng et al, J. Appl. Phys., vol118, ...
Tags: nickel caps, Diodes, Electronics
Researchers in Belgium have studied forward gate breakdown of enhancement-mode aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors with p-type GaN gate electrodes [Tian-Li Wu et al, IEEE Electron Device ...
Tags: P-Gan Gate, Electronics
The gallium nitride (GaN) substrate market will grow from $2.2bn in 2014 to more than $4bn by 2020, forecasts research and consulting firm IndustryARC in the report 'Gallium Nitride (GaN) Substrates Market Analysis: By Type (GaN on ...
Tags: Diameters, GaN Substrate Market
University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA has shipped the 50th TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) reactor since the system's ...
Tags: LED wafer, GaN MOCVD Reactot
Researchers in the USA have developed vertical Schottky and pn gallium nitride (GaN) diodes on silicon with performance comparable to devices grown on much more expensive substrates [Yuhao Zhang et al, IEEE Transactions On Electron Devices, ...
Tags: electronics, semiconductor
Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors ...
Tags: GaN MIS-HEMTs, PECVD ALD MOCVD
Japan's Toyoda Gosei Co Ltd has developed vertical gallium nitride (GaN) Schottky barrier diodes (SBDs) capable of handling 50A forward current with 790V reverse blocking [Nariaka Tanaka et al, Appl. Phys. Express, vol8, p071001, 2014]. "To ...
Tags: Vertical Schottky barrier, power supply, diodes Free standing
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
A team at IBM Research's Zurich Research Laboratory in Rüschlikon, Switzerland, with support from the firm's T. J. Watson Research Center in Yorktown Heights, New York, has developed what it says is a relatively simple, robust and ...
Tags: IBM III-Vs-on-Si, Electrical, Electronics, IBM
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that Xiamen Changelight Co Ltd of Xiamen, China has purchased multiple TurboDisc EPIK 700 gallium nitride (GaN) metal-organic chemical vapor ...
Tags: LED, MOCVD Systems