At the SEMICON West 2014 trade show in San Francisco (8-10 July), process control and yield management solutions provider KLA-Tencor Corp of Milpitas, CA, USA launched four new systems - the 2920 Series, Puma 9850, Surfscan SP5 and eDR-7110 ...
Tags: KLA-Tencor, IC Technologies
UK-based etch and deposition equipment maker Oxford Instruments says that an additional PlasmaPro 100 plasma etch system has recently been ordered by the Center for Micro and Nanoscale Research and Fabrication at the University of Science ...
Tags: OIPT Etch, Electrical, Electronics
China's Nanjing University of Posts and Telecommunications has improved the performance of indium gallium nitride (InGaN) light-emitting diodes (LEDs) on silicon (Si) substrate by removing the substrate from the region under the device ...
Tags: Silicon wafer, Electrical, Electronics
2013 China Top 500 Manufacturers hosted by China association of undertakings and China Entrepreneur Society was released recently. FAST was listed top 500 China Manufacturers with both production volumes and sales volumes exceed 10 billion ...
Tags: Transportation, Auto, Truck
Researchers in Taiwan have applied a non-vacuum process to deposit aluminium oxide (Al2O3) passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Bo-Yi Chou et al, IEEE Electron Device Letters, published online 11 ...
Tags: Electrical, Electronics, Transistor
Morgan Advanced Materials has announced new solutions in sacrificial wear layers to extend the life of alumina or beryllia electrostatic chucks (ESCs) for semiconductor, solar and LED applications. Applied as a final protective layer, the ...
Tags: Electrical, Electronics
Sweden's Royal Institute of Technology (KTH) has created a monolithic operational amplifier circuit using 4H polytype silicon carbide (SiC) bipolar junction transistors (BJTs) [Raheleh Hedayati et al, IEEE Electron Device Letters, vol35, ...
Tags: SiC SiC BJTs, Electrical, Electronics
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors
Veeco Instruments Inc of Plainview, NY, USA has formed a strategic partnership with Rudolph Technologies Inc of Flanders, NJ, USA, which provides defect inspection, process control metrology, and data analysis systems and software. The ...
Tags: Electrical, Electronics
China's Nanjing University has produced silicon carbide (SiC) avalanche photodiodes (APDs) with the lowest claimed dark count rate (DCR) at high temperatures of 150°C, compared with any other semiconductor material [Dong Zhou et al, ...
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
SAMCO Inc of Kyoto, Japan, a supplier of plasma etch, chemical vapour deposition (CVD) and surface treatment systems to compound semiconductors device makers, has relocated its US East Coast regional office. Due to a rise in customers in ...
Tags: SAMCO, chemical vapour deposition
Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
IBM Research's Thomas J. Watson Research Center and Northwestern University have developed a technique to grow hexagonal- and cubic-phase gallium nitride (h-/c-GaN) on standard (100) silicon (Si) [Can Bayram et al, Adv. Funct. Mater., ...