Researchers in the USA and Korea have developed a hydrogen high pressure annealing (HPA) process for aluminium oxide/hafnium dioxide (Al2O3/HfO2) gate stacks on indium gallium arsenide (InGaAs) quantum wells [Tae-Woo Kim et al, IEEE ...
Tags: Transistors, capacitors
In line with its strategy to focus its consumer board offering on high quality virgin fibre products, Stora Enso has sold its Barcelona mill, which produces recycled fibre based consumer board, to private equity fund Quantum. “The ...
Tags: virgin fibre, recycled-fibre
The share of total global solar photovoltaic (PV) production capacity taken by conventional crystalline silicon (x-Si) solar technologies is forecasted to decline further, from 84.7% in 2014 to 78.4% by 2019, as they approach their ...
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
University of Oklahoma in the USA has developed interband cascade (IC) lasers on indium arsenide (InAs) substrates with low threshold and high-current operation [Lu Li et al, Appl. Phys. Lett., vol106, p251102, 2015]. The researchers claim ...
Switzerland based high tech textile instruments producer, Uster has called its participation at the recently concluded ShanghaiTex 2015 a multi faceted success. An Uster press release said that important contracts were concluded and new ...
Sofradir of Palaiseau near Paris, France, which makes cooled infrared (IR) detectors based on mercury cadmium telluride (MCT/HgCdTe), indium antimonide (InSb), quantum-well infrared photodetector (QWIP) and indium gallium arsenide (InGaAs) ...
Tags: IR Detectors, infrared detector
Researchers in South Korea have used electrochemical potentiostatic activation (EPA) to alter the hydrogen content in p-type gallium nitride (GaN) layers with a view to improved performance of light-emitting diodes (LEDs) [June Key Lee et ...
Tags: GaN layers, P-Gallium Nitride
KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
The total sales of Khadi Gramodyog Bhawan, for the period from April 13 to April 28, 2015 increased over 60 per cent as compared to corresponding period of previous year, according to a government statement. The sales figure was ...
Tags: readymade garments, garments
In order to pick the best yarn clearer equipment, Chinese spinner Shandong LiaochengHuarun Textile which produces super fine cotton yarn counts conducted trails on yarn clearers of various makes. In the trial, Uster clearers were ...
Tags: Yarn Clearer, spinner
Researchers in USA and Saudi Arabia have been producing 610nm-wavelength red lasers with III-nitride nanowires (NWs) grown on silicon [Shafat Jahangir et al, Appl. Phys. Lett., vol106, p071108, 2015]. With a view to plastic fiber optical ...
Tags: plastic fiber, Electronics
Researchers in Korea and USA have developed sidewall emission-enhanced (SEE) deep ultraviolet (DUV) light-emitting diodes (LEDs) to improve light extraction efficiency DUV LEDs with wavelengths less than 300nm become very inefficient due ...
Tags: Light-Emitting Diodes, LEDs
Researchers based in Japan claim the highest output power and external quantum efficiency (EQE) so far for deep ultraviolet (DUV) sub-270nm-wavelength light-emitting diodes (LEDs) during DC operation [Shin-ichiro Inoue et al, Appl. Phys. ...
Tags: DUV LEDs, DUV devices
Epitaxial deposition and process equipment maker Veeco Instruments Inc of Plainview, NY, USA says that the UK's University of Cambridge has ordered its Propel Power gallium nitride (GaN) metal-organic chemical vapor deposition (MOCVD) ...
Tags: GaN-on-Si, Power Electronics, LEDs