X-FAB Silicon Foundries, the leading More than Moore foundry, has announced the industry’s first cost-efficient 180nm SOI technology for automotive and industrial applications that need to operate in harsh environments. X-FAB's new ...
Tags: X-FAB, SOI technology, high-voltage devices, auto accessories
Tokyo-based Mitsubishi Electric Corp is launching the ML562G84 638nm-wavelength red laser diode (LD), offering what is claimed to be record output power (under pulsed operation) of 2.5W for a 638nm projector light source. The record ...
VisIC Technologies Ltd of Rehovot, Israel, a fabless developer of power conversion devices based on gallium nitride (GaN) metail-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) founded in 2010, has unveiled what it ...
Tags: GaN-on-Si, power transistor
Princeton Power Systems of Princeton, NJ, USA - which designs and manufactures products for energy management, micro-grid operations and electric vehicle charging - has demonstrated for the first time a grid-tied bi-directional power ...
Tags: SiC JFETs, Power Converter
In booth 4D18 at PCIM (Power Conversion Intelligent Motion) Asia 2015 in Shanghai (24–26 June), GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for ...
Tags: GaN Systems, Power electronics, Transistor
Japan's Rohm Co Ltd has started mass production of what it claims is the first silicon carbide (SiC) MOSFET (metal-oxide-semiconductor field-effect transistor) with a trench structure (where the gate is formed on the sidewall of a groove in ...
GaN Systems Inc in Ottawa, Ontario, Canada – a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications – is claiming that its GS66504B – one of a family ...
Tags: GaN Systems, Power electronics, GaN SiC
At the Power Conversion Intelligent Motion (PCIM) Europe 2015 event in Nurnberg, Germany (19-21 May), president Girvan Patterson of GaN Systems Inc in Ottawa, Ontario, Canada - a fabless developer of gallium nitride (GaN)-based power ...
At the IEEE MTT-S International Microwave Symposium (IMS 2015) in Phoenix, AZ (19-21 May), M/A-COM Technology Solutions Inc of Lowell, MA, USA (which makes semiconductors, components and subassemblies for analog RF, microwave, ...
Tags: Power Transistor, Linear Operation
Avago Technologies Ltd (a supplier of III-V-based analog interface components for wireless, wireline, storage and industrial applications) has launched the ALM-2203 miniature highly integrated low-noise amplifier (LNA)-filter RFIC module, ...
Tags: LNA-Filter Module, Car Radio
GaN Systems Inc of Ottawa, Ontario, Canada, a fabless developer of gallium nitride (GaN)-based power switching semiconductors for power conversion and control applications, has launched the latest addition to its range of enhancement-mode ...
Tags: GaN Systems, Power electronics
RF power transistors supplier Freescale Semiconductor of Austin, TX, USA has launched two ultra-wideband RF power gallium nitride (GaN) transistors in new plastic packages. "The industry-leading bandwidth of these two products will enable ...
Tags: GaN Transistors, Plastic Packages
Skyworks Solutions Inc of Woburn, MA, USA (which manufactures analog and mixed-signal semiconductors) has expanded its portfolio of RF switches with a suite of analog control ICs for a variety of Internet of Things applications including ...
Tags: Skyworks, switching technologies
Panasonic Corp of Osaka, Japan is launching what it claims is the industry's smallest enhancement-mode (E-mode) gallium nitride (GaN) power transistor, encapsulating into an 8x8 dual-flat no-lead (DFN) 'X-GaN' surface-mount package. A ...
Tags: Panasonic, GaN Power Transistor
Cree Inc of Durham, NC, USA has launched two gallium nitride (GaN) high-electron-mobility transistor (HEMT) RF devices that are said to solve a number of long-standing issues for radar systems employing traditional travelling wave tube ...
Tags: GaN HEMTs, TWT Amplifiers